Transport properties in n-type InSb films grown by metalorganic chemical vapor deposition

Abstract

We have measured the temperature and magnetic field dependence of the Hall mobility and transverse magnetoresistance in n-type InSb films epitaxially grown on GaAs substrates by metalorganic chemical vapor deposition. The films show a giant magnetoresistance: e.g., at 240 K the resistivity increases over 20 times at a magnetic field of 5 T; the low field coefficient of resistivity at 77 K is as high as 47.5 μΩ cm/G. The Hall mobility decreases with magnetic field and saturates at higher fields. By taking the interface carrier transport into account, the observed field dependence of the Hall mobility and magnetoresistance may be understood based on a two-layer model.

Effect of hetero‐interface on weak localization in InSb thin film layers

“…In undoped films, the intrinsic carriers in a highmobility InSb film have frozen-out at low temperatures and the low-mobility carriers in the accumulation layer at the InSb/GaAs interface dominates the low-temperature transport [7,8,11]. The effective thickness of the accumulation layer d a is roughly estimated as ~ 20 nm from the magnetic field strength (~ 7.5 T) where the in-plane transverse MR with classical quadratic dependence starts to appear when 2l B = 2(h -/eB) 1/2 = d a [19].…”

“…However, a large lattice mismatch between InSb and GaAs induces high-density misfit dislocations at the InSb/GaAs interface, which results in an extraordinarily large carrier accumulation at the interface [6]. The interface carriers [7,8] show the positive magnetoresistance (MR) with anisotropy between parallel and perpendicular orientation of magnetic field to the film, arising from the twodimensional (2D) weak anti-localization (WAL) that reflects the interplay between the strong spin-orbit interaction (SOI) and spin-Zeeman effect [9][10][11]. In heavily Sn-doped InSb films with thickness d > 0.5 µm, on the other hand, degenerated electrons in the films show the ordinary Shubnikov-de Haas (SdH) oscillations at low temperatures.…”

Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy

“…In the following sections we introduce this experimental method and discuss the magnetotransport properties of an n-type InSb sample measured by this method. We also show that in the study of properties of narrow gap semiconductors ͑NGS͒ the flatband magnetocapacitance measurement is better at least in some cases than the Hall measurement, because the influence of the surface conducting layer, 16 the carrier mobility, 17 and the sample geometry correction factor 18 can be avoided.…”

Properties of InSb (N) epilayers grown by metal-organic chemical vapor deposition

“…Suggested by S.N. Song et al, the carrier concentration could be estimated to ~10 15 cm -3 at 30K [25]. The total E BGN can be given by An 1/3 + Bn 1/4 + Cn 1/2 , where A, B and C are constants [26].…”