1998
DOI: 10.1016/s0925-8388(98)00584-2
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Transport properties of RuSi, RuGe, OsSi, and quasi-binary alloys of these compounds

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Cited by 41 publications
(67 citation statements)
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“…Above the 20 bands, an energy gap of about 0.4 eV is observed, which allows classifying the system as a narrow band semiconductor. Our result is in agreement with previous band structure calculations [26][27][28] as well as the electron transport measurements [29,30], revealing both the semiconducting-like character of the temperature-dependent resistivity as well as a large thermopower.…”
Section: Rusi Compounds (Cscl Vs Fesi)supporting
confidence: 93%
“…Above the 20 bands, an energy gap of about 0.4 eV is observed, which allows classifying the system as a narrow band semiconductor. Our result is in agreement with previous band structure calculations [26][27][28] as well as the electron transport measurements [29,30], revealing both the semiconducting-like character of the temperature-dependent resistivity as well as a large thermopower.…”
Section: Rusi Compounds (Cscl Vs Fesi)supporting
confidence: 93%
“…FeSi, RuSi and OsSi are well known such compounds with narrow band gap [1,2]. FeSi has a nonmagnetic ground state and exhibits a metallic behavior above 500 K, while shows a large Pauli paramagnetic susceptibility with a pronounced temperature dependence [3]. The band gap of FeSi at low temperature has been confirmed by the experimental measurement of optical reflectivity and tunneling spectroscopy [4], and also the theoretical band calculations [5,6].…”
Section: Introductionmentioning
confidence: 79%
“…Green diamond is RuGe and violet circle is RuSi taken from Ref. [23]. (b) Curie temperature T c (closed symbols), and spin-glass transition temperature (open symbols).…”
Section: Fig 1 (Color Online)mentioning
confidence: 99%