Transverse spatial transport in field-effect transistors based on heterostructures with selective doping and the limits of applicability of quasi-hydrodynamic models

Measurement of the electron saturation velocity in an AlGaAs/InGaAs quantum well

“…Further progress in this area is related to improvement in the technology of producing transistors, the use of new materials, and design optimization. The behavior of these transistors is typically modeled using different modifications of hydrodynamic models [2,3] taking into account the inertia of carrier heating by the electric field. The problem is that the results of calculations are difficult to verify experimentally, because many important parameters, such as the electron drift velocity and electric field distribution in the channel cannot be measured directly, even in ordinary gallium arsenide FETs.…”