Trap Behavior of Metamorphic HEMTs with Pulsed IV and $1/f$ Noise Measurement

Shin, Ki‐Yong; Shin, Ju‐Won; Chakraborty, Surajit; Amir, Walid; Shin, Chan-Soo; Kim, Tae Woo

doi:10.1109/essderc55479.2022.9947118

Cited by 3 publications

(4 citation statements)

References 16 publications

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“…To validate the presence of the fast transient charging effect in the two types of devices, we utilized the pulsed I–V measurement and single-pulse I D – V G techniques. These measurements were conducted using a semiconductor parameter analyzer in conjunction with the waveform generator module [ 27 , 28 , 29 , 30 , 31 , 32 ]. During the pulsed I–V measurements, a single short pulse was applied to the gate and drain, and the resulting I D was measured.…”

Section: Resultsmentioning

confidence: 99%

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Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Shin,

Amir

et al. 2023

Materials

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Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. While an MHEMT exhibited elevated off-state current levels, its direct current (DC) and radio frequency (RF) traits were found to be comparable to those of InP-based lattice-matched high-electron-mobility transistors (LM-HEMTs). However, the Pulsed I–V measurement results confirmed the presence of the fast transient charging effect, leading to a more substantial degradation in drain current observed in MHEMT. In addition, through the low-frequency noise characteristics, it was confirmed that the dominant trapping location was located in the bulk site. The slope of the 1/f noise measurement indicated that the primary trapping site was in proximity to the bulk traps. The carrier-number-fluctuation (CNF) model was employed to extract the bulk trap density (Nt). For the LM-HEMTs, the value was at 3.27 × 1016 eV−1·cm−3, while for the MHEMT, it was 3.56 × 1017 eV−1·cm−3.

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Section: Resultsmentioning

confidence: 99%

“…In the case of the device used in this study, it was determined that the device’s noise characteristics followed the McWhorter model. So, to achieve a quantitative comparison, we derived N t utilizing the carrier-number-fluctuation (CNF) model [ 31 , 37 , 38 , 39 ]:

…”

Section: Resultsmentioning

confidence: 99%

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Shin,

Amir

et al. 2023

Materials

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“…High-electron-mobility transistors (HEMTs) based on III-V materials have been the next generation of high-power, high-radio-frequency, and high-temperature devices because of their high carrier concentration, high carrier mobility, and high breakdown voltage [ 1 , 2 , 3 ]. GaN-based HEMTs have recently attracted much attention because of their remarkable material properties and device performances, notably in high-power and RF applications up to the sub-terahertz regime [ 4 , 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions

et al. 2023

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In this study, we present a detailed analysis of trapping characteristics at the AlxGa1−xN/GaN interface of AlxGa1−xN/GaN high-electron-mobility transistors (HEMTs) with reliability assessments, demonstrating how the composition of the Al in the AlxGa1−xN barrier impacts the performance of the device. Reliability instability assessment in two different AlxGa1−xN/GaN HEMTs [x = 0.25, 0.45] using a single-pulse ID–VD characterization technique revealed higher drain-current degradation (∆ID) with pulse time for Al0.45Ga0.55N/GaN devices which correlates to the fast-transient charge-trapping in the defect sites near the interface of AlxGa1−xN/GaN. Constant voltage stress (CVS) measurement was used to analyze the charge-trapping phenomena of the channel carriers for long-term reliability testing. Al0.45Ga0.55N/GaN devices exhibited higher-threshold voltage shifting (∆VT) caused by stress electric fields, verifying the interfacial deterioration phenomenon. Defect sites near the interface of the AlGaN barrier responded to the stress electric fields and captured channel electrons—resulting in these charging effects that could be partially reversed using recovery voltages. The quantitative extraction of volume trap density (Nt) using 1/f low-frequency noise characterizations unveiled a 40% reduced Nt for the Al0.25Ga0.75N/GaN device, further verifying the higher trapping phenomena in the Al0.45Ga0.55N barrier caused by the rougher Al0.45Ga0.55N/GaN interface.

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“…Gallium nitride high electron mobility transistors (GaN HEMTs) have been extensively applied in microwave and millimeter-wave power amplifiers due to their high-power density and high-frequency features, making them suitable for applications such as communication, radar, and satellites [1][2][3][4]. Even without doping, the AlGaN/GaN heterostructure's large conduction band discontinuity (which is related to the difference in electron affinities between the two materials), combined with large piezoelectric and spontaneous polarization effects, result in the formation of an extremely high-density two-dimensional electron gas (2DEG) [5,6]. The high density of 2D electron gas (2-DEG), caused by strong spontaneous and piezoelectric polarization, results in the normal ON operation of Al-GaN/GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

et al. 2023

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This paper presents a novel approach to the efficient extraction of parasitic resistances in high electron mobility transistors (HEMTs). The study reveals that the gate resistance value can be accurately determined under specific forward gate bias conditions (Vg = 1.0 V), although the gate resistance value becomes unreliable beyond this threshold (Vg > 1.0 V) due to potential damage to the Schottky contact. Furthermore, by examining the characteristics of the device under a cold-FET bias condition (Vds = 0 V), a linear correlation between the gate and drain current is identified, enabling an estimation of the interdependence between the drain and source resistance using the proposed method. The estimation of parasitic pad capacitance (Cpg and Cpd) from Dambrine’s model is refined by incorporating the depletion layer capacitance on the gate side during the pinch-off condition. To validate the accuracy of the extracted parasitic capacitance and resistance values obtained from the new method, small-signal modeling is performed on a diverse range of measured devices.

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Trap Behavior of Metamorphic HEMTs with Pulsed IV and $1/f$ Noise Measurement

Cited by 3 publications

References 16 publications

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

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