Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

Abstract

This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

Co3O4 nanoparticles anchored on nitrogen-doped reduced graphene oxide as a multifunctional catalyst for H2O2 reduction, oxygen reduction and evolution reaction

“…Recently, transition metal oxides including magnanimous oxide, cobalt oxide, iron oxide and nickel oxide as promising materials have received considerableattention due to their low cost, high abundance and perfect catalytic activity for the ORR, OER and immobilizing enzymes for further applications in fabrication of hydrogen peroxide biosensor 13 14 15 . Among them, Co 3 O 4 with spinel crystal structure is beneficial to electron transportation between Co 2+ and Co 3+ ions, which has been extensively considered as an efficient electrocatalyst for OER and ORR 16 17 18 .…”

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

“…Although high- k metal oxides such as Ta 2 O 5 , ZrO 2 , and HfO 2 are promising, they suffer from low breakdown fields (usually <1 MV/cm) and large leakage current densities (>10 –5 A/cm 2 ) for film thicknesses below 10 nm . Approaches to enhance dielectric strength have been explored, for instance, by using atomic layer deposition (ALD) and/or very high annealing temperatures. , However, these methodologies are incompatible with large-scale inexpensive circuit fabrication on plastic foil and other soft matter. While electrolyte dielectrics show great processability, they typically show low breakdown voltages and frequency-dependent capacitance. , …”

“…27 Approaches to enhance dielectric strength have been explored, for instance, by using atomic layer deposition (ALD) and/or very high annealing temperatures. 28,29 However, these methodologies are incompatible with large-scale inexpensive circuit fabrication on plastic foil and other soft matter. While electrolyte dielectrics show great processability, they typically show low breakdown voltages and frequency-dependent capacitance.…”