Trapping and Detrapping Mechanisms in <i>β</i>-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements

Fabris, Elena; Santi, Carlo De; Caria, Alessandro; Li, Wenshen; Nomoto, Kazuki; Hu, Zongyang; Jena, Debdeep; Xing, Huili Grace; Meneghesso, G.; Zanoni, Enrico; Meneghini, Matteo

doi:10.1109/ted.2020.3013242

Cited by 27 publications

(8 citation statements)

References 30 publications

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“…In addition, the fabricated multi-fin β-Ga 2 O 3 FinFETs with W fin of 0.15 µm exhibit a record-high V br of 2.66 kV (at V gs = 0 V), a R on,sp of 25.2 mΩ cm 2 , and PFOM = 280 MW cm −2 , which is the highest among all Ga 2 O 3 transistors, as shown in figure 13(c). Recently, the trapping and detrapping mechanisms in vertical β-Ga 2 O 3 FinFETs have also been reported by the same group using electro-optical measurements [87]. They found that (a) a significant V th shift is observed when applied positive gate bias with V GS > 3 V, which cannot recover in…”

Section: Ga 2 O 3 Finfetsmentioning

confidence: 86%

“…Apart from the above planar FinFETs [79,80], vertical β-Ga 2 O 3 FinFETs have also exhibited great device performance [83] (V br = 2.66 kV, I DS,max = ∼4.2 kA cm −2 , R on,sp = 25.2 mΩ cm 2 , PFOM = 280 MW cm −2 ) among β-Ga 2 O 3 power transistors, which is mainly demonstrated by Hu et al [82][83][84][85][86][87] from Cornell University. Vertical β-Ga 2 O 3 FinFETs have first reported in 2017 [86], and exhibited normally-off operation and decent device performance in publication of 2018, 2019 [82][83][84][85].…”

Section: Ga 2 O 3 Finfetsmentioning

confidence: 94%

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A state-of-art review on gallium oxide field-effect transistors

Qiao¹,

Zhang²,

Zhao³

et al. 2022

J. Phys. D: Appl. Phys.

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As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga2O3) has recently aroused increasing attention in the area for high-power electronics, power switch for radio frequency (RF) operation, and solar blind UV detectors. The β-phase of Ga2O3 is deemed as a potential candidate for next generation high-power electronics due to its high theoretical breakdown electric field (8 MV cm−1), UWBG (4.8 eV), and large Baliga’s figure of merit. Owing to the intensive research efforts across the world since 2013, gallium oxide transistors recently make rapid advances in device design and performance. Until now, high quality large-size bulk Ga2O3 and n-type epi products are successively coming onto the market, as well as there are gratifying progress worldwide to develop more complex epi structures, including β-(Al x Ga1−x )2O3/Ga2O3, β-(In x Ga1−x )2O3/Ga2O3, n-Ga2O3/p-NiO, β-Ga2O3/4H-SiC heterostructures et al. In this paper, the basic physical properties of Ga2O3, and the recent research process of Ga2O3 based transistors field-effect transistor (FET) for high-power electronics and RF are introduced. Furthermore, various state-of-the-art structures and process used in Ga2O3 based FETs have been summarized and compared, including planar/vertical metal-oxide-semiconductor field-effect transistor (MOSFET), trench MOSFET, FinFET, modulation-doped FET or called it high electron mobility transistors with two-dimensional electron gas channel, SOI MOSFET, thus the potential of Ga2O3 FETs is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for high-power and RF application will be also analyzed.

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Section: Ga 2 O 3 Finfetsmentioning

confidence: 86%

Section: Ga 2 O 3 Finfetsmentioning

confidence: 94%

A state-of-art review on gallium oxide field-effect transistors

Qiao¹,

Zhang²,

Zhao³

et al. 2022

J. Phys. D: Appl. Phys.

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show abstract

“…For example, interesting dynamic phenomena such as output capacitance hysteresis 103 were reported in superjunction devices and the inter-fin design in FinFETs, which is not critical for R ON,SP and BV, was found to play a determining role in the switching speed and losses. 104 Reliability and robustness are also important aspects of these devices and work in this areas is increasing with reports looking at their avalanche and short circuit robustness, [105][106][107] gate reliability and stability, 108 as well as the cosmic ray robustness. 109 A recent example illustrates valuable robustness characteristics enabled by multidimensional device architectures where a GaN Fin-JFET was used as an avalanche GaN transistor.…”

Section: Discussionmentioning

confidence: 99%

Multidimensional device architectures for efficient power electronics

2022

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Power semiconductor devices are key to delivering high efficiency energy conversion in power electronics systems, which is critical towards efforts in reducing energy loss, cutting carbon dioxide emissions and creating more sustainable technology. While the use of wide or ultra-wide bandgap materials will be required in order to create improved power devices, multidimensional architectures can also improve performance, regardless of the underlying material technology. In particular, multidimensional device architectures -such as superjunction, multi-channel and multi-gate technologies -can enable advances in the speed, efficiency, and form factor of power electronics systems. Here we review the development of multidimensional device architectures for efficient power electronics. We explore the rationale for using multidimensional architectures and the different architectures available. We also consider the performance limits, scaling, and material figure-of-merits of the architectures, and identify key technological challenges that need to be addressed in order to realize the full potential of the approach.

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“…Recently, one of the first detailed studies on vertical Ga 2 O 3 modules was performed by Fabris et al on 2.6 kV Ga 2 O 3 transistors as discussed earlier. [ 95 ] Their studies revealed that the devices show a significant positive shift in the threshold voltage with an applied gate bias >3 V. This was a non‐reversible shift in the threshold voltage except under UV illumination. The fabrication process for this device involved multiple steps for gate robustness such as wet etch to remove plasma damage caused by dry etch, post‐deposition annealing, etc.…”

Section: Vertical Ga2o3 Devices: Challengesmentioning

confidence: 99%

Vertical GaN and Vertical Ga₂O₃Power Transistors: Status and Challenges

Gupta

Pasayat

2022

Physica Status Solidi (a)

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Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) are rapidly making inroads into the power semiconductor markets dominated by the incumbent silicon (Si). However, the performance of these WBG semiconductors has not reached the ideal material limits and thus, leaves significant room for improvement. In this regard, for medium voltage (600–1700 V)/high current (>50 A) applications, with a high Baliga figure of merit (BFOM) and architectural advantages, vertical GaN offers a highly energy‐efficient solution. Similarly, for high‐voltage applications (>1700 V), ultrawide bandgap (UWBG) semiconductors with their high BFOM present a strong case. Gallium oxide (Ga2O3) has emerged as the UWBG material for next‐generation power electronics. Together vertical GaN and vertical Ga2O3 have the potential to serve a large range of power switching applications. These technologies are both at different junctures and face different challenges to become commercially viable. Herein, a comprehensive review of all major vertical GaN and Ga2O3 power transistors is provided while discussing their features, advantages, and challenges that need to be solved. Finally, the critical material and device advancements that are needed to push these technologies further are also discussed.

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Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements

Cited by 27 publications

References 30 publications

A state-of-art review on gallium oxide field-effect transistors

A state-of-art review on gallium oxide field-effect transistors

Multidimensional device architectures for efficient power electronics

Vertical GaN and Vertical Ga₂O₃Power Transistors: Status and Challenges

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Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements

Cited by 27 publications

References 30 publications

A state-of-art review on gallium oxide field-effect transistors

A state-of-art review on gallium oxide field-effect transistors

Multidimensional device architectures for efficient power electronics

Vertical GaN and Vertical Ga2O3Power Transistors: Status and Challenges

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Product

Resources

About

Vertical GaN and Vertical Ga₂O₃Power Transistors: Status and Challenges