Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations

Miccoli, Cristina; Martino, Valeria Cinnera; Reina, S.; Rinaudo, Salvatore

doi:10.1109/led.2013.2274326

Cited by 57 publications

(26 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our simulation Shockely-Read-Hall recombination was used to calculate dynamic traps in the device. 33 It also assumes that there are traps exist at particular energy level within the bandgap. In our device simulation, sentaurus uses following set of equations.…”

Section: Device Structure and Simulation Detailsmentioning

confidence: 99%

“…The electron and hole capture cross-section for interface traps is about 1×10 15 cm -2 used for simulation. 33 There is an intentional background carbon doping due to low pressure tuning 14 at the interface of GaN/Al 0.2 Ga 0.8 N. To define carbon doping, an analytical doping profile has been created at the interface of GaN/Al 0.2 Ga 0.8 N which shows diffusion of carbon towards GaN. Therefore concentration of carbon is been optimized as 1 × 10 15 cm 3 by simulation.…”

Section: Device Structure and Simulation Detailsmentioning

confidence: 99%

See 1 more Smart Citation

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

View full text Add to dashboard Cite

In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

show abstract

Section: Device Structure and Simulation Detailsmentioning

confidence: 99%

Section: Device Structure and Simulation Detailsmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

View full text Add to dashboard Cite

show abstract

“…These components are extracted using single-timeconstant RC low-pass-filter. The time constant of the RC circuit is in the order of 1 ms (typical thermal time constant of GaN devices) [27]. This implementation is widely used as a simple and efficient technique for simulating the thermal dynamic behavior [7].…”

Section: Electrothermal Model For Drain Currentmentioning

confidence: 99%

On Neural Networks Based Electrothermal Modeling of GaN Devices

Jarndal

2019

IEEE Access

View full text Add to dashboard Cite

This paper presents an efficient artificial neural network (ANN) electrothermal modeling approach applied to GaN devices. The proposed method is based on decomposing the device nonlinearity into intrinsic trapping-induced and thermal-induced nonlinearities that can be simulated by low-order ANN models. The ANN models are then interconnected in the physics-relevant equivalent circuit to accurately simulate the transistor. Genetic algorithm (GA)-based training procedure has been implemented to find optimal values for the weights of the ANN models. The modeling approach is used to develop a largesignal model for a 1-mm gate-width GaN high-electron mobility transistor (HMET). The model has been implemented in the advanced design system (ADS) and it has been validated by pulsed and continues small-and large-signal measurements. The model simulations showed a very good agreement with the measurements and verify the validity of the developed technique for dynamic electrothermal modeling of active devices. INDEX TERMS GaN HEMT, electrothermal modeling, neural networks, genetic algorithm optimization.

show abstract

“…Trapping centers are cons idered to be the rna in cause of the parasitic effects. A lot of efforts have been dedicated into the investigation of trapping phenomena [4][5][6][7][8][9][10][11][12]. The tum-on pulse transient tests and simulation with surface traps were carried out in [3][4].…”

Section: Introductionmentioning

confidence: 99%

“…The bulk trapping effect was analyzed with the transient simulation in [7][8][9]. Miccoli et aL contribute the gate-lag and drain-lag effects to the surface donor traps and the bulk acceptor traps, res pectively [12]. However, the origin of traps is still under debate.…”

Section: Introductionmentioning

confidence: 99%

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

Zhou

Feng

Wang

et al. 2014

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

View full text Add to dashboard Cite

In order to investigate the current collapse of AIGaN/GaN high-electron-mobility transistor (HEMT) due to trapping effects, the two-dimensional (2-D) transient simu lations were carried out and analyzed in this paper, taking into account the coupling effect of traps and thermal effect. Both the gate-lag transient current and pulsed I-V curves were reproduced by the simulation. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of AIGaN/GaN HEMTs besides surface traps. Furthermore, thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is helpfu I in analyzing the mechanism of dynamic current co lIapse, and the work in this paper will benefit the model development and reliability study of GaN-based devices.

show abstract

Trapping and Thermal Effects Analysis for AlGaN/GaN HEMTs by Means of TCAD Simulations

Cited by 57 publications

References 12 publications

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

On Neural Networks Based Electrothermal Modeling of GaN Devices

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

Contact Info

Product

Resources

About