Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

Strenaer, R.; Guhel, Y.; Gaquière, C.; Boudart, B.

doi:10.1109/ted.2022.3209636

Cited by 2 publications

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“…As previous articles have shown, deep states with an activation energy of 2.0 eV can be linked to full‐core edge dislocations existing in the GaN layer. [ 13,27 ] Likewise, another electron trap with an activation energy of 1.3 eV was also identified. This result is consistent with the studies reported in the literature, as deep level with an activation energy of 1.3 ± 0.1 eV has been identified.…”

Section: Resultsmentioning

confidence: 99%

“…As previous articles have shown, deep states with an activation energy of 2.0 eV can be linked to full-core edge dislocations existing in the GaN layer. [13,27] Likewise, another electron trap with an…”

Section: Resultsmentioning

confidence: 99%

“…These components were manufactured using same technological process as those studied in ref. [27]. In this way, we will be able to check whether the combination of pulsed electrical measurements with photoionization techniques using IR illumination (800 < λ < 1000 nm) makes any difference to the characterization of trapping effects compared with the results reported previously.…”

Section: Doi: 101002/pssa202300653mentioning

confidence: 92%

“…In this way, we will be able to check whether the combination of pulsed electrical measurements with photoionization techniques using IR illumination (800 < λ < 1000 nm) makes any difference to the characterization of trapping effects compared with the results reported previously. [ 27 ] Then, we also highlighted that a high voltage level used for the electrical characterization of AlInN/GaN can involve a screening of trapping effects.…”

Section: Introductionmentioning

confidence: 93%

“…Moreover, the pulsed current dispersion and the threshold voltage shift with different quiescent V GS Q are more pronounced, while dynamic on-resistance variation is significantly reduced under UV illumination. [26] In a previous article, [27] we combined pulsed electrical measurements with photoionization techniques to highlight the presence of a deep level with an activation energy of 2.0 eV that can be attributed to dislocations in the GaN buffer of AlInN/GaN HEMTs. In this case, photoionization measurements were carried out using an electromagnetic wave with wavelengths (λ) ranging from 400 to 800 nm.…”

Section: Doi: 101002/pssa202300653mentioning

confidence: 99%

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Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Strenaer,

Guhel,

Gaquière

et al. 2024

Physica Status Solidi (a)

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The aim of this article is to show that it is possible to rapidly estimate the activation energies of electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurements with photoionization techniques using Infra‐Red (IR) illumination. This technique avoids the time‐consuming task of performing electrical measurements at different temperatures in order to determine the activation energies of the electron traps using Arrhenius laws. Thus, a deep level at 1.3 eV was detected and attributed to the presence of carbon in GaN buffer of the component. Moreover, we have highlighted that the trapping effect can be screened when the transistors are biased with a high drain‐source voltage during pulsed measurements.This article is protected by copyright. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Doi: 101002/pssa202300653mentioning

confidence: 92%

Section: Introductionmentioning

confidence: 93%

Section: Doi: 101002/pssa202300653mentioning

confidence: 99%

See 3 more Smart Citations

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Strenaer,

Guhel,

Gaquière

et al. 2024

Physica Status Solidi (a)

Self Cite

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Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

et al. 2023

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GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. However, the charge trapping effect has limitations to its performance. To study the trapping effect on the device large-signal behavior, AlGaN/GaN HEMTs and metal-insulator-semiconductor HEMTs (MIS-HEMTs) were characterized through X-parameter measurements under ultraviolet (UV) illumination. For HEMTs without passivation, the magnitude of the large-signal output wave (X21FB) and small-signal forward gain (X2111S) at fundamental frequency increased, whereas the large-signal second harmonic output wave (X22FB) decreased when the device was exposed to UV light, resulting from the photoconductive effect and suppression of buffer-related trapping. For MIS-HEMTs with SiN passivation, much higher X21FB and X2111S have been obtained compared with HEMTs. It suggests that better RF power performance can be achieved by removing the surface state. Moreover, the X-parameters of the MIS-HEMT are less dependent on UV light, since the light-induced performance enhancement is offset by excess traps in the SiN layer excited by UV light. The radio frequency (RF) power parameters and signal waveforms were further obtained based on the X-parameter model. The variation of RF current gain and distortion with light was consistent with the measurement results of X-parameters. Therefore, the trap number in the AlGaN surface, GaN buffer, and SiN layer must be minimized for a good large-signal performance of AlGaN/GaN transistors.

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Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

Cited by 2 publications

References 0 publications

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

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