1991
DOI: 10.1109/55.116955
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Trapping phenomena in avalanche photodiodes on nanosecond scale

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Cited by 236 publications
(145 citation statements)
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“…Table 1 shows the resulting decay parameters, and the final Monte Carlo simulation is shown in figure 5. The decay parameters are in agreement with earlier published data on APDs [19,23].…”
Section: Characterization Of Afterpulsing Side Effectsupporting
confidence: 82%
See 1 more Smart Citation
“…Table 1 shows the resulting decay parameters, and the final Monte Carlo simulation is shown in figure 5. The decay parameters are in agreement with earlier published data on APDs [19,23].…”
Section: Characterization Of Afterpulsing Side Effectsupporting
confidence: 82%
“…The afterpulse effect is due to carrier traps, which are populated by avalanche current in the detection process [19,23]. We have found that bright pulses also populate the carrier traps, irrespective of whether they generate detection events or not.…”
Section: Characterization Of Afterpulsing Side Effectmentioning
confidence: 87%
“…Conditioned on a detection of the laser pulse, the FPGA looks for an afterpulse and subsequently updates a histogram. Unlike the normal doublewindow method 15 for gated detectors, this procedure allows the higher-order afterpulse contributions to be easily characterized, i.e., afterpulse of afterpulse. After a sufficient acquisition time, the histogram will reproduce the afterpulsing decay curve, from which the total afterpulse probability, P ap , is directly calculated by…”
mentioning
confidence: 99%
“…During each avalanche pulse, a few avalanche carriers are trapped in local deep levels at intermediate energy between mid-gap and band edge. They are subsequently released and can retrigger the avalanche, thereby generating correlated afterpulses [12], [14], [19]. The afterpulsing can be reduced by making the hold-off time of the AQC long enough to cover most of the delayed release events [12].…”
Section: Spad Devices and Quenching Circuitsmentioning
confidence: 99%