Traveling wave electrodes for wide-bandwidth substrate-removed electro-optic modulators

Dogru, Selim; Dagli, N.

doi:10.1109/ipcon.2012.6358540

Cited by 3 publications

(3 citation statements)

References 4 publications

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“…This is mainly due to large device capacitance and the excessive resistance of p-layer. This difficulty can be solved using a so called staircase waveguide and an n-i-p-i-n epilayer design [16], [17]. Modulator electrodes fabricated this way demonstrated that modulation bandwidth in excess of 35 GHz is possible for 2-mm-long electrodes.…”

Section: Device Fabricationmentioning

confidence: 99%

Ultralow Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators at 1550 nm

Shin

Dagli

2013

IEEE J. Select. Topics Quantum Electron.

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Section: Device Fabricationmentioning

confidence: 99%

Ultralow Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators at 1550 nm

Shin

Dagli

2013

IEEE J. Select. Topics Quantum Electron.

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“…The device also incorporated spot size converters (SSCs) for low coupling loss to optical fiber. In [88], an electrorefractive InP TW MZM was demonstrated, employing substrate removal to realize high speed and high efficiency. This device exhibited a bandwidth of 35 GHz and half-wave voltage Vp h of 0.8 V. Several other novel modulator structures were realized in InP, including examples with integrated lasers [89]- [91].…”

Section: Indium Phosphidementioning

confidence: 99%

RF Engineering Meets Optoelectronics: Progress in Integrated Microwave Photonics

et al. 2015

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“…Fig. 3 shows the traveling wave electrode design utilizing loaded line approach [10], [11]. Unloaded part of the electrode is a coplanar transmission line on thick BCB over the transfer substrate.…”

Section: Traveling Wave Modulator Designsmentioning

confidence: 99%

Traveling Wave Electrodes for Substrate Removed Electro-Optic Modulators With Buried Doped Semiconductor Electrodes

Dogru

Shin

Dagli

2013

IEEE J. Quantum Electron.

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This paper reports theoretical and experimental studies of traveling wave electrodes suitable for wide bandwidth operation of ultra-low voltage substrate removed compound semiconductor electro-optic modulators. These modulators use submicron epitaxial layers removed from their substrates and contain buried electrodes made out of doped semiconductors. This approach enables very uniform submicron electrode gap resulting in ultra-low voltage operation. Traveling wave electrodes suitable for wide bandwidth and low voltage operation are designed using loaded line approach. Electrode capacitance and resistance are reduced significantly using staircase waveguides and n-i-p-i-n epitaxial layer designs. A very accurate modeling of the electrode is introduced. Such electrodes are fabricated and characterized up to 35 GHz. Experimental and modeling results are found to agree very well, making the design of such electrodes possible. Theoretical and experimental results show that subvolt modulators with electrical to optical bandwidths in excess of 35 GHz are possible.

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Traveling wave electrodes for wide-bandwidth substrate-removed electro-optic modulators

Cited by 3 publications

References 4 publications

Ultralow Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators at 1550 nm

Ultralow Drive Voltage Substrate Removed GaAs/AlGaAs Electro-Optic Modulators at 1550 nm

RF Engineering Meets Optoelectronics: Progress in Integrated Microwave Photonics

Traveling Wave Electrodes for Substrate Removed Electro-Optic Modulators With Buried Doped Semiconductor Electrodes

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