2012
DOI: 10.1063/1.4732120
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Treatment surfaces with atomic oxygen excited in dielectric barrier discharge plasma of O2 admixed to N2

Abstract: This paper describes the increase in surface energy of substrates by their treatment with gas composition generated in plasmas of DBD (Dielectric Barrier Discharge) in O2 admixed with N2. Operating gas dissociation and excitation was occurred in plasmas developed in two types of reactors of capacitively-coupled dielectric barrier configurations: coaxial cylindrical, and flat rectangular. The coaxial cylindrical type comprised an inner cylindrical electrode encapsulated in a ceramic sheath installed coaxially i… Show more

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Cited by 5 publications
(5 citation statements)
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“…To achieve a suitable labeling density for superresolution imaging, dilutions of reagents were Coverslips were plasma cleaned prior to use to remove impurities and reduce autofluorescence. Coverslips were subjected to a high frequency plasma for 1 minute in a Harrick PDC-32G plasma cleaner, handled with forceps, and were used immediately after treatment, since the effects of plasma cleaning relax exponentially with a time constant of around 4 hours [19].…”
Section: Sample Preparationsmentioning
confidence: 99%
“…To achieve a suitable labeling density for superresolution imaging, dilutions of reagents were Coverslips were plasma cleaned prior to use to remove impurities and reduce autofluorescence. Coverslips were subjected to a high frequency plasma for 1 minute in a Harrick PDC-32G plasma cleaner, handled with forceps, and were used immediately after treatment, since the effects of plasma cleaning relax exponentially with a time constant of around 4 hours [19].…”
Section: Sample Preparationsmentioning
confidence: 99%
“…In consequence, there is no continuous sample heating and resolidified Si can be assumed between the pulses [8,33]. Therefore, to reduce the computational time, the time between melting intervals was Comparison of contact angles Θ of Si μ-cones on different substrates and corresponding literature surface energy values for the used substrates (silicon nitride (SiN), [36] glass, [37] aluminum (Al) [38] and tungsten (W) [39]). For the selected Si-NP layer thickness of 320 nm and laser energy density of 1.04 J cm −2 , the Si-NPs melt sequentially, and five pulses are required to completely melt the thin film (figure 3).…”
Section: Cfd Simulation With Melting Depth Profilementioning
confidence: 99%
“…(a): Cross-sectional SEM image of Si μ-cones on a Ti/W coated glass substrate with indicated contact angle Θ. (b):Comparison of contact angles Θ of Si μ-cones on different substrates and corresponding literature surface energy values for the used substrates (silicon nitride (SiN),[36] glass,[37] aluminum (Al)[38] and tungsten (W)[39]).…”
mentioning
confidence: 99%
“…When equilibrium exists between ionization and recombination, the plasma will burn in a stable manner [28]. Minimum ionization energy of an electron is required to ionize an atom and if energy transfer due to the impact is less than the ionization energy, then the struck atom is excited [29].…”
Section: Application Of Plasmamentioning
confidence: 99%