Trench formation and lateral damage induced by gallium milling of silicon

Russo, Michael F; Maazouz, M.; Giannuzzi, Lucille A.; Chandler, Clive; Utlaut, M.; Garrison, Barbara J.

doi:10.1016/j.apsusc.2008.05.083

Cited by 19 publications

(11 citation statements)

References 16 publications

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“…Depending on the size of the ion beam, lateral damage induced by the beam can be the same as or larger than the ion beam itself. 24 As for metal deposition, it is induced by the secondary electrons from either an electron beam or the interaction of the ion beam with the surface. In all of these explanations, it is assumed that there is only a top surface, i.e.…”

Section: Fabrication and Resultsmentioning

confidence: 99%

Realization of a 33 GHz phononic crystal fabricated in a freestanding membrane

Goettler

Reinke

et al. 2011

AIP Advances

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Phononic crystals (PnCs) are man-made structures with periodically varying material properties such as density, ρ, and elastic modulus, E. Periodic variations of the material properties with nanoscale characteristic dimensions yield PnCs that operate at frequencies above 10 GHz, allowing for the manipulation of thermal properties. In this article, a 2D simple cubic lattice PnC operating at 33 GHz is reported. The PnC is created by nanofabrication with a focused ion beam. A freestanding membrane of silicon is ion milled to create a simple cubic array of 32 nm diameter holes that are subsequently backfilled with tungsten to create inclusions at a spacing of 100 nm. Simulations are used to predict the operating frequency of the PnC. Additional modeling shows that milling a freestanding membrane has a unique characteristic; the exit via has a conical shape, or trumpet-like appearance.

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Section: Fabrication and Resultsmentioning

confidence: 99%

Realization of a 33 GHz phononic crystal fabricated in a freestanding membrane

Goettler

Reinke

et al. 2011

AIP Advances

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“…[92] using molecular statics simulations. Short-range interactions (active at only very short distances: <1 Å) [93,94] between Zr-Ga and Ga-Ga were defined by a truncated ZieglerBiersack-Littmark (ZBL) potential [95]. During ion irradiation, Ga + ions may come very close to other Ga + and/or Zr atoms, and the ZBL potential is used to prevent such close approaches.…”

Section: Simulations Detailsmentioning

confidence: 99%

“…This was required to prevent displacement, through momentum transfer, of the simulation box itself. Further, an intermediate 25 Å layer, adjacent to the rigid layer, was defined as a stochastic layer [93,94]. The atoms belonging to this layer were 1604…”

Section: Simulations Detailsmentioning

confidence: 99%

Orientation sensitivity of focused ion beam damage in pure zirconium: direct experimental observations and molecular dynamics simulations

Revelly

Srinivasan

Panwar

et al. 2014

Philosophical Magazine

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A high-purity predominantly single crystalline zirconium was subjected to controlled focused ion beam (FIB) damage. Damage estimates were obtained from electron backscattered diffraction (EBSD) and nano-indentation measurements on exactly the same area/orientation. The damage kinetics, between different crystallographic orientations, differed by one order of magnitude and a clear hierarchy of orientation sensitive ion damage emerged. Use of a simple geometric approach, linear density of atoms and corresponding scattering cross-sections to impinging gallium ions, could differentiate between extreme damage kinetics; but failed when such differences were relatively minor. Numerically intensive molecular dynamics (MD) simulations, on the other hand, were more effective. However, MD simulations or direct EBSD observations failed to justify anisotropic irradiation hardening (AIH): 3-8 times more hardening for near basal. Though explanation for AIH is indirect, evidence and rationalization for orientation-sensitive radiation damage appears clear and statistically reproducible.

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“…4 However, it has already been shown that the Gaussian beam shape of the FIB causes damage outside the purposely irradiated area on silicon. [5][6][7][8][9] The lateral damage might spread out over several micrometres from the purposely irradiated area and thus the localized character of FIB processing has to be re-evaluated. Several methods have been applied to study the lateral damage extension, e.g., atomic force microscopy (AFM) topography measurements, 10 TEM analyses, 11,12 carrier mobility measurements, 13 and scanning capacitance microscopy.…”

Section: Introductionmentioning

confidence: 99%

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Stumpf

Quba

Singer

et al. 2018

Journal of Applied Physics

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The lateral damage induced by focused ion beam on silicon carbide was characterized using electrical scanning probe microscopy (SPM), namely, scanning spreading resistance microscopy and conductive atomic force microscopy (c-AFM). It is shown that the damage exceeds the purposely irradiated circles with a radius of 0.5 lm by several micrometres, up to 8 lm for the maximum applied ion dose of 10 18 cm À2. Obtained SPM results are critically compared with earlier findings on silicon. For doses above the amorphization threshold, in both cases, three different areas can be distinguished. The purposely irradiated area exhibits resistances smaller than the non-affected substrate. A second region with strongly increasing resistance and a maximum saturation value surrounds it. The third region shows the transition from maximum resistance to the base resistance of the unaffected substrate. It correlates to the transition from amorphized to defectrich to pristine crystalline substrate. Additionally, conventional transmission electron microscopy (TEM) and annular dark-field STEM were used to complement and explain the SPM results and get a further understanding of the defect spreading underneath the surface. Those measurements also show three different regions that correlate well with the regions observed from electrical SPM. TEM results further allow to explain observed differences in the electrical results for silicon and silicon carbide which are most prominent for ion doses above 3 Â 10 16 cm À2. Furthermore, the conventional approach to perform current-voltage measurements by c-AFM was critically reviewed and several improvements for measurement and analysis process were suggested that result in more reliable and impactful c-AFM data.

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Trench formation and lateral damage induced by gallium milling of silicon

Cited by 19 publications

References 16 publications

Realization of a 33 GHz phononic crystal fabricated in a freestanding membrane

Realization of a 33 GHz phononic crystal fabricated in a freestanding membrane

Orientation sensitivity of focused ion beam damage in pure zirconium: direct experimental observations and molecular dynamics simulations

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

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