Trench SOI LDMOS with vertical field plate

Wu, Lijuan; Zhang, Wentong; Shi, Qin; Cai, Pengfei; He, Hangcheng

doi:10.1049/el.2014.3443

Cited by 17 publications

(8 citation statements)

References 11 publications

(14 reference statements)

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“…5, With the decrease in ρ RFP , the effect of RFP is enhanced and BV is increased, but I RFP is increased as well. When ρ RFP equals 1×10 9 •cm, the density of the leakage current through RFP (I RFP ) is about 10 −13 A/μm, approximating to the leakage current density of TLD+QVSJ. Hence, in terms of a trade-off between BV and I RFP , ρ RFP is selected to be 1×10 9 •cm.…”

Section: Simulation and Optimizationmentioning

confidence: 99%

“…Based on the common structure of T-LDMOS, many improved structures are proposed [4]- [12], such as the ones with vertical field plates in the trench [7]- [9], and the ones with variable-k trench-dielectric [10]- [12]. Recently, many studies start applying a well-known technique of super junction (SJ) to the LDMOS [13]- [16], as well as to the T-LDMOS [17]- [20], such as the T-LDMOS with a quasi vertical (QV) SJ structure [17], [19], [20] and that with a lateral SJ structure at the trench bottom [18].…”

Section: Introductionmentioning

confidence: 99%

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A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate

Cheng

Chen

et al. 2019

IEEE J. Electron Devices Soc.

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An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts a resistive field plate (RFP) to help QVSJ satisfy charge-balance. The realization of RFP barely complicates the device fabrication, but it motivates QVSJ to significantly improve the relationship between breakdown voltage (BV) and specific on-state resistance (R ON,SP). The simulation results show that compared with the conventional QVSJ T-LDMOS, the proposed one gains the R ON,SP reduced by about 79% under the same BV requirement of about 500 V. It therefore presents an excellent figure of merit (FOM) (FOM = BV 2 /R ON,SP , Baliga's FOM) up to 29.8 MW/cm 2 , which is superior to the prior art and exhibits a bright prospect of saving energy. INDEX TERMS Trench LDMOS (T-LDMOS), quasi vertical super junction (QVSJ), resistive field plate (RFP).

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Section: Simulation and Optimizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate

Cheng

Chen

et al. 2019

IEEE J. Electron Devices Soc.

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“…[7][8][9][10][11] State-of-theart LDMOS devices obtained by the dielectric trench to sustain a high reversed voltage have been reported. [12][13][14][15][16][17] In these devices, breakdown occurs in the drift region for the crowded electric field. [18,19] Several analytical models for the conventional LDMOS devices have been reported to approximate the surface electric field.…”

Section: Introductionmentioning

confidence: 99%

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation*

Wang¹,

Liao²,

Wang³

2019

Chinese Phys. B

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A power metal-oxide-semiconductor field-effect transistor (MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz–Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.

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“…One direction in the development of the power devices is to achieve a compromise between the breakdown voltage (BV) and specific on-resistance (R on,sp ), expressed as the figure of merit FOM1 (FOM1 = BV 2 / R on,sp ). The trench and vertical field plate (VFP) technologies have been widely used to design the power devices with high BV and low R on,sp [2][3][4][5][6][7][8]. The trench in the drift region can short the lateral length of the device [9].…”

Section: Introductionmentioning

confidence: 99%

Split‐gate LDMOS with double vertical field plates

Yuan

Lei

et al. 2018

Micro & Nano Letters

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In this study, a novel split-gate lateral double-diffused metal oxide semiconductor field effect transistor with double vertical field plates (SG DVFP LDMOS) is proposed. The first feature of the SG DVFP LDMOS is that the SG with gradient gate oxide is introduced. The SG not only optimises the bulk electric field distributions to increase the breakdown voltage (BV) but also reduces the gate-drain charge (Q GD) owing to the thick gate oxide. The second feature of the SG DVFP LDMOS is the presence of the DVFP and P-pillar. They modulate the bulk electric field distributions and assist to deplete the drift region. So the specific on-resistance (R on,sp) is decreased and the BV is improved. The source vertical field plate reduces the contact region between the gate and drain, thereby the Q GD is reduced. Compared with the conventional SG LDMOS and rectangle-gate DVFP LDMOS, the figure of merit FOM1 of SG DVFP LDMOS is increased by 123.2 and 86.6%, and the loss figure of merit FOM2 is enhanced to 16.9 and 37.2%. Simultaneously, the key process steps of the SG DVFP LDMOS are proposed.

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Trench SOI LDMOS with vertical field plate

Cited by 17 publications

References 11 publications

A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate

A Trench LDMOS Improved by Quasi Vertical Super Junction and Resistive Field Plate

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation*

Split‐gate LDMOS with double vertical field plates

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