Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate

Abstract

InGaAs quantum wires ͑QWRs͒ with cross sections as narrow as 10 nmϫ20 nm have been fabricated on a (311)A InP V-grooved substrate under an As 2 source. Trench-type InGaAs QWRs consist of (111)A and (331)B facets with an angle of about 22°. Cathode-luminescence and photoluminescence measurements confirmed the luminescence peak arising from the QWRs.

InAs quantum dots array grown with an As2 source on non-planar GaAs substrates

“…The different crystal facets are thought to be due to the difference in the surface migration and the incorporation rate of group-III atoms under As 2 and As 4 sources. The formation of the V-grooves during the buffer layer growth under the As 2 source is the same feature as reported previously [5][6][7]. Fig.…”

“…Because of their larger size, QDs grown with an As 2 source have a longer wavelength emission than those grown with an As 4 source. We have also demonstrated the effects of using an As 2 source to form the crystal facets and fabricate quantum wire structures on non-planar GaAs [5] and InP [6,7] substrates. The crystal facets in the buffer layer grown with an As 2 source were different from those grown with an As 4 source on non-planar structures.…”

Realization of 1.3μm InAs quantum dots with high-density, uniformity, and quality

“…Sugaya reported that As 2 and As 4 sources have different migration lengths for quantum wires and dots [17][18][19]. The wavelength of QDs grown with the As 2 source was slightly longer than that of QDs grown with the As 4 source [19].…”

Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs

“…To verify this theoretical prediction and realize device applications, it is important that we fabricate high-quality QWRs with atomically flat interfaces. By using a combination of atomic hydrogen and a dimer arsenic source, we have recently demonstrated the selective growth of trench-type InGaAs/InAlAs QWR on a ( hydrogen-assisted molecular beam epitaxy (H-MBE) [2]. We have also demonstrated the clear negative differential resistance (NDR) of a trenchtype QWR-FET at low temperature [3,4].…”