Tribo-electrochemical characterization of copper with patterned geometry

Joo, Sukbae; Liang, Hong

doi:10.1016/j.mee.2012.05.023

Cited by 8 publications

(2 citation statements)

References 17 publications

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“…5b. The contact pressure decreased as the pattern density increased, which led to a decrease in the SiO 2 removal rate in the trenches [27]. Thus, small amounts of dishing occurred at low pattern densities.…”

Section: Resultsmentioning

confidence: 98%

Interpolymer complexes of poly(acrylic acid) and poly(ethylene glycol) for low dishing in STI CMP

Seo

Moon

et al. 2015

Applied Surface Science

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Section: Resultsmentioning

confidence: 98%

Interpolymer complexes of poly(acrylic acid) and poly(ethylene glycol) for low dishing in STI CMP

Seo

Moon

et al. 2015

Applied Surface Science

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“…Significant effort has been made in developing new and effective slurries [2,3]. To date, global planarization remains to be a major concern [4], particularly for patterned wafers where the metal/dielectric density differs across the wafer. The limitation of ion and slurry transfer is one of the key factors affecting planarization.…”

Section: Introductionmentioning

confidence: 99%

Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper

Chen

Zhao

et al. 2013

Friction

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Continued reduction in feature dimension in integrated circuits demands high degree of flatness after chemical mechanical polishing. Here we report using new yttrium oxide (Y 2 O 3 ) nanosheets as slurry abrasives for chemical-mechanical planarization (CMP) of copper. Results showed that the global planarization was improved by 30% using a slurry containing Y 2 O 3 nanosheets in comparison with a standard industrial slurry. During CMP, the two-dimensional square shaped Y 2 O 3 nanosheet is believed to induce the low friction, the better rheological performance, and the laminar flow leading to the decrease in the within-wafer-non-uniformity, surface roughness, as well as dishing. The application of the two-dimensional nanosheets as abrasive in CMP would increase the manufacturing yield of integrated circuits.

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