“…As depicted in Figure B, the b -values obtained from the linearly fitting plots of log( i ) vs log( v ) for the peaks 1–4 are calculated to be 1.05, 0.88, 0.90, and 0.85, respectively, signifying the dominated surface pseudocapacitive process in the composite of NiSe 2 /C-2G-500. It should be mentioned that the b -value of peak 1 is larger than 1, clearly indicating that this step of reaction is completely governed by surface pseudocapacitive behaviors, which has also been commonly reported in the literature. , In addition, the contribution from the pseudocapacitive effect to the total capacity at a specific scan rate can be quantitatively estimated based on the following equation: i = k 1 v + k 2 v 1/2 , where k 1 and k 2 are two parameters determined from the slope of iv ‑1/2 vs v 1/2 . , Basically, k 1 v represents the fraction of pseudocapacitive behavior, while k 2 v 1/2 denotes the quantity of the diffusion-controlled process . Typically, the contribution from the surface pseudocapacitive effect under 1 mV s –1 is quantified to be 87.4%, as depicted by the shadow area in Figure C.…”