True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

Kozak, Joseph P.; Zhang, Ruizhe; Song, Qihao; Liu, Jingcun; Saito, Wataru; Zhang, Yuhao

doi:10.1109/led.2021.3063360

Cited by 57 publications

(24 citation statements)

References 13 publications

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“…9(b). This CIS test has been applied to SP-HEMTs [170], [172], [189] and HD-GITs [170], [189], [190]. The CIS tests with varying stressors (dv/dt, ambient temperature) show a failure overvoltage boundary consistent with the UIS tests under the same conditions.…”

Section: Characterization Methodsmentioning

confidence: 58%

“…In the withstand process, the primary electrical failure is related to the overvoltage margin of the device, i.e., the dynamic breakdown voltage [41]. This BV in the transient switching could be different from the static BV measured through the quasi-static I-V sweep on the curve tracer [22], [41], [172], [173].…”

Section: B Surge-energy and Overvoltage Robustnessmentioning

confidence: 99%

“…More recently, CIS circuits have been used as an advanced tool to study the GaN HEMT's ruggedness in overvoltage hard switching. SP-HEMTs, HD-GITs, and MIS-HEMTs (used in direct-drive devices) have been reported to survive the repetitive overvoltage hard switching with an overvoltage up to 90% of the dynamic BV [172], [190], [192]. However, different devices exhibit significant distinction in the magnitude of parametric shifts and their recovery speed.…”

Section: Overvoltage/surge Robustness and Application Insightsmentioning

confidence: 99%

See 2 more Smart Citations

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

109

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Section: Characterization Methodsmentioning

confidence: 58%

Section: B Surge-energy and Overvoltage Robustnessmentioning

confidence: 99%

Section: Overvoltage/surge Robustness and Application Insightsmentioning

confidence: 99%

See 1 more Smart Citation

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

109

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show abstract

“…These hot carriers have a high probability of being trapped in the passivation layer of the component [6]. As a consequence, the dynamic resistance of the component increases, and the breakdown voltage of the component may change [7].…”

Section: Hard Switching Commutationmentioning

confidence: 99%

Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Alam

Morel

Phung

et al. 2022

2022 International Semiconductor Conference (CAS)

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The development of gallium nitride (GaN) components is one of the most noticeable advances in power electronics and for high-frequency applications. Nevertheless, GaN components are not yet totally reliable, mainly because of the trapping phenomenon which affects the static characteristics of GaN components, including the on-state resistance. Dynamic resistance degradation studies have been carried out, for quasi-static and hard switching (Double Source Test: DST) stresses. The results show the influence of the reverse stress voltage and hard switching on the characteristics of the AlGaN/GaNSchottky diodes.

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“…With the development of microwave communication technology, higher requirements are put forward for the frequency and power characteristics of microelectronic devices. GaN-based devices, such as GaN/AlGaN high electron mobility transistors (HEMT) and GaN diodes, have been widely used as power devices because of their high breakdown voltage [ 1 , 2 , 3 ] and operation frequency [ 4 , 5 , 6 ]. Although GaN devices have many advantages, they are still suffering from some problems such as short channel effect [ 7 , 8 , 9 ] and current collapse effect [ 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

et al. 2022

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A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10−7 Ω·cm2 at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics.

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True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

Cited by 57 publications

References 13 publications

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

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