Tungsten interconnects in the nano-scale regime

Steinhögl, W.; Steinlesberger, G.; Perrin, Monique; Scheinbacher, G.; Schindler, G.; Traving, M.; Engelhardt, M.

doi:10.1016/j.mee.2005.07.033

Cited by 58 publications

(34 citation statements)

References 2 publications

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“…[6,[39][40][41][42][43][44] Overall, it was concluded that grain boundary reflections are the dominant contribution to the resistivity of NWs (Supporting Information). [6,40] Here, we have fabricated highly crystalline NWs that will have a negligible contribution from grain boundary effects, and we therefore only need to consider the effects of surface scattering. Resistance caused by surface scattering is expected to become increasingly significant as the diameter of the NW approaches and drops below the bulk mean free path.…”

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confidence: 99%

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

et al. 2010

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The electronics industry has consistently decreased the dimensions of structural components and they are now well into the nanoscale range. Naturally, a significant portion of the chip is composed of interconnects. Besides, the engineering problems associated with short wavelength lithography to achieve smaller components, the performance of increasing number of interconnections has become one of the biggest limiting factors in device performance.[1,2] The power loss, signal degradation, interconnection delays, and other performance limitations related to interconnects should be minimized. The importance of such a task can be seen from the perspective of power dissipation by computation elements. The energy dissipation density in electronic chips approaches that in nuclear reactors. [3,4]

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confidence: 99%

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

et al. 2010

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“…These two kinds of resonators are with different lengths so as to resonate at the same frequency. Because of the small cross section, the size effect must be taken into account in the calculation of resistivity [29]- [31]. As depicted in the figure, the unloaded Q-factor of copper resonator is much smaller than that of then MWCNT one, due to the strong skin and size effects in the copper wire under such circumstance.…”

Section: Q-factors Of the Mwcnt Resonatormentioning

confidence: 99%

High-Performance Resonator Based on Multiwalled Carbon Nanotube (MWCNT)

Huang

Tang

et al. 2014

IEEE Trans. Nanotechnology

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A half-wavelength multiwalled carbon nanotube (MWCNT) microstrip resonator is proposed and analyzed in this paper. Its resonant frequency, as well as the corresponding unloaded Q-factors, is predicted by using the multiconductor transmission-line (MTL) model and the equivalent single conductor (ESC) model. The MTL model provides an accurate solution for both the resonant frequency and Q-factors. Although the resonant frequency can be captured approximately with the ESC model, the calculated Q-factors are with low accuracy. By properly selecting the geometric dimensions according to the curves obtained with the MTL model, MWCNT resonators can be designed easily for a specific resonant frequency. Further, the radius-dependent characteristic of temperature drift of the resonator is explored. The superior performance and potential applications of the MWCNT resonator are illustrated by numerical results. Index Terms-Half-wavelength resonator, multiwalled carbon nanotube (MWCNT), resonant frequency, temperature drift, unloaded Q-factor.

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“…It is well known that the nano-sized materials possess much better electronic, mechanical, and chemical properties than the traditional bulk materials (Mistry et al 2016;Tian et al 2013;Salorinne et al 2016;Gilbert et al 2004;Zhu et al 2016;Monti et al 2016;Guo et al 2015;Su and Buehler 2016;Qi et al 2009;Qi and Lee 2010). In this respect, various nano-sized W samples have been fabricated experimentally by means of such techniques as mechanical alloying and single damascene process flow (Steinh gl et al 2005;Wang et al 2007;Yeong and Thong 2006).…”

Section: Introductionmentioning

confidence: 99%

Phase transition and mechanical properties of tungsten nanomaterials from molecular dynamic simulation

2017

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Molecular dynamic simulation is used to systematically find out the effects of the size and shape of nanoparticles on phase transition and mechanical properties of W nanomaterials. It is revealed that the bodycentered cubic (BCC) to face-centered cubic (FCC) phase transition could only happen in cubic nanoparticles of W, instead of the shapes of sphere, octahedron, and rhombic dodecahedron, and that the critical number to trigger the phase transition is 5374 atoms. Simulation also shows that the FCC nanocrystalline W should be prevented due to its much lower tensile strength than its BCC counterpart and that the octahedral and rhombic dodecahedral nanoparticles of W, rather than the cubic nanoparticles, should be preferred in terms of phase transition and mechanical properties. The derived results are discussed extensively through comparing with available observations in the literature to provide a deep understanding of W nanomaterials.

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Tungsten interconnects in the nano-scale regime

Cited by 58 publications

References 2 publications

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

Near‐Bulk Conductivity of Gold Nanowires as Nanoscale Interconnects and the Role of Atomically Smooth Interface

High-Performance Resonator Based on Multiwalled Carbon Nanotube (MWCNT)

Phase transition and mechanical properties of tungsten nanomaterials from molecular dynamic simulation

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