Tuning resistive switching on single-pulse doped multilayer memristors

Abstract

Short-period multilayers containing ultrathin atomic layers of Al embedded in titanium dioxide (TiO(2)) film-here called single-pulse doped multilayers-are fabricated by atomic layer deposition (ALD) growth methods. The approach explored here is to use Al atoms through single-pulsed deposition to locally modify the chemical environment of TiO(2) films, establishing a chemical control over the resistive switching properties of metal/oxide/metal devices. We show that this simple methodology can be employed to produce well-defined and controlled electrical characteristics on oxide thin films without compound segregation. The increase in volume of the embedded Al(2)O(3) plays a crucial role in tuning the conductance of devices, as well as the switching bias. The stacking of these oxide compounds and their use in electrical devices is investigated with respect to possible crystalline phases and local compound formation via chemical recombination. It is shown that our method can be used to produce compounds that cannot be synthesized a priori by direct ALD growth procedures but are of interest due to specific properties such as thermal or chemical stability, electrical resistivity or electric field polarization possibilities. The monolayer doping discussed here impacts considerably on the broadening of the spectrum of performance and technological applications of ALD-based memristors, allowing for additional degrees of freedom in the engineering of oxide devices.

Large‐Area Rolled‐Up Nanomembrane Capacitor Arrays for Electrostatic Energy Storage

“…The incorporation of material with higher dielectric constants leads to an increase of the dielectric losses . The ALD grown oxides are mainly amorphous and the capacitor's performance might be further improved by modifying the hybrid oxide layers during or after the device preparation through thermal treatment . Yet, the increase of the dielectric constant by heat treatment causes also an increase in leakage current.…”

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

“…20 In mixed oxides 21 (Al2O3 and TiO2) and Al2O3 / TiO2 nanolaminates, 22 tailored optical properties varying from Al2O3 to TiO2 with gradual composition change have been demonstrated. Electrical properties 23,24 can be tuned by adjusting either the TiO2 fraction 25,26 or the bilayer thickness 27,28,29,30 or with an interfacial layers. 31 The effect of alloying elements on controlling the grain size is well known in bulk materials.…”

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

“…Stacks and periodical nanolaminates for ReRAM cells can be fabricated by physical vapor deposition, using, e.g., sputtering technique [26,30]. Hereby atomic layer deposition method has become the emerging method for the fabrication of switching media consisting of, e.g., Al2O3 and HfO2 [25,27,28], or Al2O3 and TiO2 [28].…”