Tunnel assisted hopping in neutron irradiated gallium arsenide

Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP

“…The temperature dependence of it was proportional to exp((Τ0/T) 1 / 4 ) at lower and to exp(-Ε3/kΤ) at higher range of temperature. Such a behaviour has been predicted by the theory of hopping conduction on shallow impurities and it was observed in hopping between deep defects in neutron irradiated GaAs [7] and low-temperature (LT) GaAs.…”

Deep-center hopping conduction in GaN

“…12,13 Deep-center hopping, on the other hand, has been reported only for a few semiconductors, such as neutron-irradiated SI GaAs, 14 and low-temperature-grown MBE GaAs. 15 It has been speculated that deep-defect hopping may explain the conduction in SI GaN, 3 but the present work is the first detailed analysis of this phenomenon.…”

Defect studies in low-temperature-grown GaAs

“…The observation of hopping conduction near room temperature in L TMBE layers, though unusual, is not unique. Hopping conductivity has been observed in this temperature range in neutron irradiated GaAs (Coates and Mitchell 1972) and lnP doped with Mn, a deep level transition nietal impurity (Kuznetsov, et al 1984). The difference from shallow level hopping is that it is occurring over deep states which are more localized, r < 1 oA, than shallow levels.…”