Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate

Hung, Min-Feng; Wu, Yung-Chun; Chang, Jow‐Ran; Chang‐Liao, Kuei‐Shu

doi:10.1109/led.2012.2226232

Cited by 39 publications

(23 citation statements)

References 11 publications

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“…In this study, tactile touch sensor was connected to the gate electrode of FGRAM to generate the programing bias to memorize the touch information. The flexible FGRAM has been previously reported 8,9 . However, sensor-memory integrated e-wallpaper concept has not been proposed to date.…”

Section: Introductionmentioning

confidence: 99%

9‐2: Flexible Sensors and Memory Integration Toward Electronic Wallpaper

Takei

2019

Symp Digest of Tech Papers

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Human-interactive electronics have a great attractive attention for wearable devices and robotic applications due to growing Internet of Things concept One of interesting applications we propose in this target may be a wallpaper to monitor room environment and to memorize some information such as handwriting memos as a message board electrically. To show the possibility of this electronic wallpaper (e-wallpaper) concept, in this study, we demonstrate a flexible nonvolatile floating gate random access memory (FGRAM) integrated with a tactile touch sensor. In addition, temperature sensor sheet is laminated to measure room temperature distributions. As a proof-of-concept, e-wallpaper is demonstrated to show the functionality of memorizing and deleting tactile pressure information. Although more sensor functionalities and system integration are required to be practical, this concept may lead the flexible loT application as well as the future flexible electronics.

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Section: Introductionmentioning

confidence: 99%

9‐2: Flexible Sensors and Memory Integration Toward Electronic Wallpaper

Takei

2019

Symp Digest of Tech Papers

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“…[35][36][37][38][39] Recently, transparent oxide-based semiconductors, such as ZnO and amorphous indium-gallium-zinc-oxide (a-IGZO), have attracted much attention due to their considerable potential applications in flat, flexible, and transparent displays. 40,41 In particular, a-IGZO TFTs possess advantageous properties such as high mobility, excellent uniformity, good transparency to visible light, and low process temperature, making them a promising candidate to be adopted in the next generation of the display industry. [41][42][43] Therefore, they are very promising alternatives to replace amorphous silicon TFTs for application in active matrix liquid crystal displays (AMLCD) and organic lightemitting diode displays (AMOLED) as switching/driving devices.…”

Section: Introductionmentioning

confidence: 99%

“…40,41 In particular, a-IGZO TFTs possess advantageous properties such as high mobility, excellent uniformity, good transparency to visible light, and low process temperature, making them a promising candidate to be adopted in the next generation of the display industry. [41][42][43] Therefore, they are very promising alternatives to replace amorphous silicon TFTs for application in active matrix liquid crystal displays (AMLCD) and organic lightemitting diode displays (AMOLED) as switching/driving devices. However, there are some difficulties which are necessary to overcome for oxide TFTs to be practical in these applications, such as instability under gate bias stress, light illumination, or the surrounding ambiance.…”

Section: Introductionmentioning

confidence: 99%

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

Liu

Chang

Chou

et al. 2014

Journal of Applied Physics

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This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast ID-VG and modulated peak/base pulse time ID-VD measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.

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“…As the number of P/E cycles increases, the magnitude of the memory window decreases. The p-channel of the twin poly-Si FinFET floating gate memory device[17]-[21] maintained a wide threshold voltage window of 3.6 V (72.2%) after 10 4 P/E cycles of FN operation.…”

mentioning

confidence: 99%

Comprehensive Study of N-Channel and P-Channel Twin Poly-Si FinFET Nonvolatile Memory

Yeh

Liu

et al. 2014

IEEE Trans. Nanotechnology

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This paper develops the n-channel and p-channel twin poly-Si fin field-effect transistor nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results demonstrate that the NW device has superior memory characteristics because its Ω-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.6 V after 10 4 program and erase cycles, and after 10 years, the charge is 53.4% of its initial value. In the future, it can be applied in multilayer Si ICs in fully functional system-on-panel, active-matrix liquid-crystal display and 3-D stacked flash memory.Index Terms-Fin field-effect transistor (FinFET), flash memory, nanowires (NWs), nonvolatile memory (NVM), Ω-gate, 3-D, twin poly-Si.

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Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate

Cited by 39 publications

References 11 publications

9‐2: Flexible Sensors and Memory Integration Toward Electronic Wallpaper

9‐2: Flexible Sensors and Memory Integration Toward Electronic Wallpaper

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

Comprehensive Study of N-Channel and P-Channel Twin Poly-Si FinFET Nonvolatile Memory

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