Two-component solution processing of oxide semiconductors for thin-film transistors via self-combustion reaction

Kang, Young Hun; Jeong, Sunho; Ko, Jung Min; Lee, Ji-Yoon; Choi, Youngmin; Lee, Changjin; Cho, Song Yun

doi:10.1039/c4tc00139g

Cited by 69 publications

(79 citation statements)

References 36 publications

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“…In previous spin-CS studies, very smooth surface topologies were achieved for thin (5-nm) single-layer/ multilayer films (ρ RMS = 0.2-0.5 nm) (2,16). However, thicker (20-to 50-nm) single-layer films are significantly more porous and rougher (ρ RMS > 1 nm) (2,16), reminiscent of conventional thick sol-gel oxide films (17)(18)(19)(20)(21). In this work, atomic force microscopy and SEM images show that optimized single-layer SCS growth yields smooth thicker oxide films ( 5 at low operating voltages of 2 V owing to the enhanced capacitance of the gate dielectric ( Fig.…”

Section: Significancementioning

confidence: 99%

“…Recently, this laboratory reported a low-temperature solution method, spin-coating combustion synthesis (spin-CS), for fabricating MO TFTs (SI Appendix, Fig. S1) (2,16). By incorporating an oxidizer and a fuel in the precursor solution, localized, highly exothermic chemical transformations occur within the spin-coated films, effecting rapid condensation and M-O-M lattice formation at temperatures as low as 200-300°C, which was assessed by thermal and X-ray diffraction (XRD) analysis, and yielding high-performance TFTs.…”

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confidence: 99%

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Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Smith²,

Zhou

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

181

186

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Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. etal-oxide (MO) semiconductors, especially in amorphous phases, represent an appealing materials family for next generation electronics owing to their high carrier mobilities, good environmental/thermal stability, mechanical flexibility, and excellent optical transparency (1-3). MO films complement organic semiconductors (4, 5), carbon/oxide nanomaterials (6), and flexible silicon (7, 8) for enabling new technologies, such as flexible displays and printed sensors. For fabricating high-performance electronics with acceptable fidelity, conventional processes require capital-intensive physical/chemical vapor deposition techniques. Capitalizing on the solubility of MO precursors in common solvents, solution methods have been used to fabricate semiconducting MO layers for thin-film transistors (TFTs). However, the fabrication process and field-effect mobilities of these TFTs are not competitive with the corresponding vapor-deposited (e.g., sputtered) devices (9), and developing routes to solution-derived MO TFTs with technologically relevant thicknesses and performance comparable to state of the art vapor-deposited devices is a critical milestone for MO electronics evolution.Sol-gel techniques are used extensively for MO film growth, including films for high-performance TFTs (10-13). However, the required sol-gel condensation, densification, and impurity removal steps typically require >400-500°C processing temperatures, which are incompatible with inexpensive glasses and typical flexible plastic substrates (14). Progress toward significantly reducing the processing temperatures of sol gel-derived MO films has afforded excellent TFT mobilities; however, achieving both reproducible high-performance and stable device operation remains an unsolved issue for Ga-containing materials (15). Sol-gel on-a-chip for indium-zinc-oxide (3) and deep-UV ...

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Section: Significancementioning

confidence: 99%

mentioning

confidence: 99%

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Smith²,

Zhou

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

181

186

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“…Zinc oxide (ZnO) is one of such semiconductor [2] and especially because of nontoxicity [3], reasonably good crystallinity [4], high electron mobility [5] and light weight [6], they are widely used for channel material in TFTs [7]. Recently several metals like In, Sn, Ga [8] have been successfully doped into pure ZnO and subsequently IZO [9] (In doped ZnO), ZTO (Sn doped ZnO) [7], IGZO (In,Ga doped ZnO) [10] have been employed as channel material in order to further improve device performance [9], [11], [12] , [13]. But most of those dopants are either expensive or need process conditions such as higher temperature (>300 °C ), high vacuum for thin film formation which do not allow them in low cost flexible electronic applications [14].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Combustion Processed Stable Al Doped ZnO Thin Film Transistor: Process Extendable up to Flexible Devices

Venkateshwarlu

Gandla

2016

J. Mod. Mater.

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A B S T R A C TWe report combustion synthesis of polycrystalline Aluminium doped zinc oxide (AZO) at low temperature for next generation low cost, flexible thin film transistor (TFT) application. Solution processed AZO thin film has been characterized by X ray diffraction and atomic force microscopy to confirm crystallinity. In this research work TFT with solution processed AZO as channel layer has been fabricated on both rigid and flexible substrate which exhibits excellent electrical stability and improved field effect mobility of 1.2 cm 2 V -1 S -1 , threshold voltage of 15 V and on-off ratio of 10 6 as compared to pure ZnO based TFT. All the measurements have been carried out with varying Al concentration. Moreover, variation in defect density of AZO with Al concentration which essentially causes significant change in TFT's performance is demonstrated by chemical composition and bonding state analysis using XPS. Our results suggest that low temperature solution processed AZO TFTs have a potential for low cost, flexible and transparent electronic applications.

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“…[10][11][12][13][14][15][16] In general, metal oxide semiconductors on SiO 2 gate insulators are annealed at 200-500 C to form a coherent interface between the semiconductor and the gate insulator.…”

Section: Introductionmentioning

confidence: 99%

“…We chose a recently reported simple method for the amorphous IZO deposition in which the precursor solution is composed of zinc nitrate, indium acetylacetonate and 2-methoxyethanol. 16 Cho et al reported that 350 C-annealed IZO TFTs with SiO 2 gate insulators exhibited mobilities up to 13.8 cm 2 V À1 s À1 . 16 Although amorphous IZO channel layers with a smooth surface were well-formed on SiO 2 gate insulators, the formation on K-PIB gate insulators should be conrmed for the TFT application.…”

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confidence: 99%

Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors

et al. 2014

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Two-component solution processing of oxide semiconductors for thin-film transistors via self-combustion reaction

Abstract: The self-combustion of In and Zn precursors coordinated with fuel and oxidizer ligands is utilized for high performance IZO TFTs.

Cited by 69 publications

References 36 publications

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Low Temperature Combustion Processed Stable Al Doped ZnO Thin Film Transistor: Process Extendable up to Flexible Devices

Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors

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