Two-dimensional arrays of self-organized Ge islands obtained by chemical vapor deposition on pre-patterned silicon substrates

Abstract

Ordered arrays of Ge islands on a Si(100) surface were obtained using interference lithography for pre-patterning and subsequent growth by chemical vapor deposition (CVD). The patterns represent arrays of holes etched 10-30 nm deep into the Si substrate, with a periodicity of 280-320 nm. The holes were fabricated using reactive ion etching. Prior to island growth, a Si buffer layer was grown for optimizing the shape of the patterns. The samples were analyzed using atomic force microscopy and photoluminescence. It was found that Ge island arrays deposited on patterned substrates have a narrower size distribution and a more intense photoluminescence than islands on non-patterned areas. Parameters controlling the perfection of ordered arrays of islands are discussed.

Three-dimensional phononic nanocrystal composed of ordered quantum dots

“…Without the patterned substrate, the dots exhibited random lateral distribution and lower size uniformity, and the wetting layers became thicker compared with those on the patterned regions. 6,12 The results obtained from these random QDs are also shown in Fig. 3 and exhibit a much weaker resonance feature even with thicker wetting layers.…”

Influence of composition and substrate miscut on the evolution of {105}-terminated in-plane Si1−xGex quantum wires on Si(001)

“…[6][7][8] The application potential of self-organized SiGe islands reaches from infrared light emitters [9][10][11][12] and stressors in MOSFET devices 13 to quantum transport devices. [14][15][16] For carrier transport, however, one-dimensional (1D) SiGe quantum wires (QWs) could be even more attractive.…”

Recent developments in Ge dots grown on pit‐patterned surfaces

“…The most common way of producing Ge dots in pit‐patterned substrates is via molecular beam epitaxy (MBE). Recently, chemical vapor deposition (CVD) 33 and low‐energy plasma‐enhanced CVD (LE‐PECVD) 34, 35 have also been used. Many recent experimental efforts have been devoted to an analysis of the influence of the growth parameters on Ge dot formation, shape, and composition.…”

“…Recently, CVD 33 and LE‐PECVD 34, 35 have also been used for Ge dot fabrication. With optimized growth conditions, highly regular arrays of Ge dots can also be obtained 33, 34. Furthermore, dots with the highest Ge content so far ( x > 0.8) were reported in Ref.…”