Two dimensional CrGa<sub>2</sub>Se<sub>4</sub>: a spin-gapless ferromagnetic semiconductor with inclined uniaxial anisotropy

Chen, Qian; Wang, Ruqian; Huang, Zhaocong; Yuan, Shijun; Wang, Haowei; Ma, Liang; Wang, Jinlan

doi:10.1039/d0nr08296a

Cited by 24 publications

(16 citation statements)

References 41 publications

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“…Since MAE in two-dimensional systems strongly influence on the Curie temperature, our result also implies that the Curie temperature can be controlled by the electric field in qualitative manner. Quantitative prediction on the Curie temperature change, which is beyond our scope, can be performed by Monte Carlo simulation on anisotropic Heisenberg model 36 .…”

Section: Discussionmentioning

confidence: 99%

Drastic change of magnetic anisotropy in Fe3GeTe2 and Fe4GeTe2 monolayers under electric field studied by density functional theory

Kim

Lee

Jang

et al. 2021

Sci Rep

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Magnetic anisotropy energy (MAE) is one of the most important properties in two-dimensional magnetism since the magnetization in two dimension is vulnerable to the spin rotational fluctuations. Using density functional theory calculation, we show that perpendicular electric field dramatically enhances the in-plane and out-of-plane magnetic anisotropies in Fe3GeTe2 and Fe4GeTe2 monolayers, respectively, allowing the change of easy axis in both systems. The changes of the MAE under the electric field are understood as the result of charge redistribution inside the layer, which is available due to the three-dimensional (3D) network of Fe atoms in the monolayers. As a result, we suggest that due to the unique structure of FenGeTe2 compounds composed by peculiar 3D networks of metal atoms, the MAE can be dramatically changed by the external perpendicular electric field.

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Section: Discussionmentioning

confidence: 99%

Drastic change of magnetic anisotropy in Fe3GeTe2 and Fe4GeTe2 monolayers under electric field studied by density functional theory

Kim

Lee

Jang

et al. 2021

Sci Rep

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“…(I) The simulated Curie temperature (J) The calculated BSs by the HSE06 method. (G–J) Reproduced from ( Chen et al, 2021 ) with permission from RSC publishing. (K) The schematic diagram of NRSGSs.…”

Section: Introductionmentioning

confidence: 99%

“…In 2021, Chen et al ( Chen et al, 2021 ) predicted a 2D spin gapless ferromagnetic semiconductor of CrGa 2 Se 4 monolayer with indirect zero-gap state. As shown in Figures 2G,H , one finds that the magnetic ground state is the FM state with a T-I configuration.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional spin-gapless semiconductors: A mini-review

Wang

2022

Front. Chem.

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In the past decade, two-dimensional (2D) materials and spintronic materials have been rapidly developing in recent years. 2D spin-gapless semiconductors (SGSs) are a novel class of ferromagnetic 2D spintronic materials with possible high Curie temperature, 100% spin-polarization, possible one-dimensional or zero-dimensional topological signatures, and other exciting spin transport properties. In this mini-review, we summarize a series of ideal 2D SGSs in the last 3 years, including 2D oxalate-based metal-organic frameworks, 2D single-layer Fe2I2, 2D Cr2X3 (X = S, Se, and Te) monolayer with the honeycomb kagome (HK) lattice, 2D CrGa2Se4 monolayer, 2D HK Mn–cyanogen lattice, 2D MnNF monolayer, and 2D Fe4N2 pentagon crystal. The mini-review also discusses the unique magnetic, electronic, topological, and spin-transport properties and the possible application of these 2D SGSs. The mini-review can be regarded as an improved understanding of the current state of 2D SGSs in recent 3 years.

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“…Moreover, we have tested the energy variation dependence on the polar angle of magnetization (Figure S5), and no inclined easy axis is found. 28 Apart from MAE, Curie temperature (T c ) is also a key property for magnetic materials. To estimate the T c of Mn 2 X 3 nanosheets, Monte Carlo simulations based on the classic Heisenberg model are performed.…”

mentioning

confidence: 99%

“…The magnetic anisotropy along the x (100) and y (010) axes shows slight difference for Mn 2 Te 3 /Mn 2 Se 3 nanosheet, because the x and y directions are not symmetrically equivalent in the structure. Moreover, we have tested the energy variation dependence on the polar angle of magnetization (Figure S5), and no inclined easy axis is found …”

mentioning

confidence: 99%

High Curie Temperature and Intrinsic Ferromagnetic Half-Metallicity in Mn₂X₃ (X = S, Se, Te) Nanosheets

et al. 2021

J. Phys. Chem. Lett.

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Two-dimensional (2D) intrinsic half-metallic materials with room-temperature ferromagnetism, sizable magnetic anisotropy energy (MAE), and wide half-metallic gap are excellent candidates for pure spin generation, injection, and transport in nanospintronic applications. However, until now, such 2D half metallicity has been rarely observed in experiment. In this work, by using first-principles calculations, we design a series of such materials, namely, Mn2X3 (X = S, Se, Te) nanosheets, which could be obtained by controlling the thickness of synthesized α-MnX(111) nanofilm to a quintuple X–Mn–X–Mn–X layer. All these nanosheets are dynamically and thermally stable. Electronic and magnetic studies reveal they are intrinsic half metals with high Curie temperatures between 718 and 820 K, sizable MAEs with −1.843 meV/Mn for Mn2Te3 nanosheet, and wide half-metallic gaps from 1.55 to 1.94 eV. Above all, the outstanding features of Mn2X3 nanosheets make them promising in fabricating nanospintronic devices working at room temperature.

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Two dimensional CrGa₂Se₄: a spin-gapless ferromagnetic semiconductor with inclined uniaxial anisotropy

Abstract: The magnetic semiconductor with high critical temperature has long been the focus in material science and recently is also known as one of the fundamental questions in two-dimensional (2D) materials....

Cited by 24 publications

References 41 publications

Drastic change of magnetic anisotropy in Fe3GeTe2 and Fe4GeTe2 monolayers under electric field studied by density functional theory

Drastic change of magnetic anisotropy in Fe3GeTe2 and Fe4GeTe2 monolayers under electric field studied by density functional theory

Two-dimensional spin-gapless semiconductors: A mini-review

High Curie Temperature and Intrinsic Ferromagnetic Half-Metallicity in Mn₂X₃ (X = S, Se, Te) Nanosheets

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Two dimensional CrGa2Se4: a spin-gapless ferromagnetic semiconductor with inclined uniaxial anisotropy

Abstract: The magnetic semiconductor with high critical temperature has long been the focus in material science and recently is also known as one of the fundamental questions in two-dimensional (2D) materials....

Cited by 24 publications

References 41 publications

Drastic change of magnetic anisotropy in Fe3GeTe2 and Fe4GeTe2 monolayers under electric field studied by density functional theory

Drastic change of magnetic anisotropy in Fe3GeTe2 and Fe4GeTe2 monolayers under electric field studied by density functional theory

Two-dimensional spin-gapless semiconductors: A mini-review

High Curie Temperature and Intrinsic Ferromagnetic Half-Metallicity in Mn2X3 (X = S, Se, Te) Nanosheets

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Product

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Two dimensional CrGa₂Se₄: a spin-gapless ferromagnetic semiconductor with inclined uniaxial anisotropy

High Curie Temperature and Intrinsic Ferromagnetic Half-Metallicity in Mn₂X₃ (X = S, Se, Te) Nanosheets