Two-dimensional LED arrays for virtual display image sources

Holm, P.; Rhyne, W.; Gable, B.; Rogers, S.; Jachimowicz, Karen E.; Richard, F.; Ackley, D. E.

doi:10.1109/16.760395

Cited by 12 publications

(2 citation statements)

References 8 publications

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“…If the InGaN based green LED wafer with an emission wavelength of around 520 nm is used for microdisplay, the luminous efficacy can be dramatically improved by one order. Based on the luminous efficacy value and the pixel L-I characteristics, the luminance properties of a fully illuminated passive-driven µLED array can be estimated from the equation [39]…”

Section: Passive-driven µLed Arraymentioning

confidence: 99%

III-nitride micro-emitter arrays: development and applications

Fan

Lin

Jiang

2008

J. Phys. D: Appl. Phys.

120

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III-nitride micro-emitter array technology was developed in the authors' laboratory around 1999. Since its inception, much progress has been made by several groups and the technology has led to the invention of several novel devices. This paper provides an overview on recent progress in single-chip ac-micro-size light emitting diodes (μLEDs) that can be plugged directly into standard high ac voltage power outlets, self-emissive microdisplays and interconnected μLEDs for boosting light emitting diodes's wall-plug efficiency, all of which were evolved from III-nitride micro-emitter array technology. Finally, potential applications of III-nitride visible micro-emitter arrays as a light source for DNA microarrays and future prospects of III-nitride deep ultraviolet micro-emitter arrays for label-free protein analysis in microarray format by taking advantage of the direct excitation of intrinsic protein fluorescence are discussed.

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Section: Passive-driven µLed Arraymentioning

confidence: 99%

III-nitride micro-emitter arrays: development and applications

Fan

Lin

Jiang

2008

J. Phys. D: Appl. Phys.

120

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“…The LED arrays can also be used as microdisplays, which have the applications for projection displays, impaired eye cornea replacements, etc. T [2]- [4]. To lighten up an LED pixel in an array, passive matrix addressing method is generally employed [5].…”

Section: Introductionmentioning

confidence: 99%

Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays

Shih

Huang

2005

IEEE Electron Device Lett.

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We demonstrate a novel GaN-based heterojunction field effect transistor (HFET) active-matrix circuit for an lightemitting diode (LED) microdisplay. Simulation results are shown with basic and improved circuits. Variations of process and material growth conditions are discussed by correlating device parameters with LED flow currents in this circuit. It shows that the HFET-LED control circuit approach provides a stability path to mitigate variations of LED currents during operations.

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