Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

Abstract

The effect of carrier localization in InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes is investigated by photoluminescence (PL) and time-resolved PL (TRPL) measurements. PL results show that two peaks obtained by Gaussian fitting both relate to the emission from localized states. By fitting the TRPL lifetimes at various emission energies, two localization depths corresponding to the In-rich regions and quasi-MQWs regions are obtained. Using a model we proposed, we suggest that compositional fluctuations of In content and variation of well width are responsible for carrier localization in In-rich regions and quasi-MQWs regions, respectively.

Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

“…First, the SLS is weakened with the decreasing growth rate, which accords with the reducing well width fluctuation due to the reducing growth rate. Second, references [23,25] have demonstrated similar guess about SLS, which can further support our viewpoints. When the QW growth rate is reduced to 0.0088 nm/s, the localization effect is less significant and thus only a single PL peak induced by DLS appears for S15.…”

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

“…Inhomogeneous and localized bright spots which are larger than those of the blue LEDs were discovered in both CSEM images. This can be attributed to carrier localization caused higher indium contents in green MQWs 4849. The EL intensity profiles marked along the white dotted lines in Fig.…”

Efficiency enhancement of green light emitting diodes by improving the uniformity of embedded quantum dots in multiple quantum wells through working pressure control

“…2(d)). The larger average QD size in S-500 causes the lower PL peak emission intensity at a larger wavelength attributed to the lower recombination efficiency and the wider QD size distribution contributes to the broader emission peak [11,16,23,24]. Fig.…”