Two-Phase Read Strategy for Low Energy Variation-Tolerant STT-RAM

Park, Jaeyoung; Yim, Young Uk

doi:10.1109/tvlsi.2018.2851943

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Cited by 2 publications

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“…This fluctuation induces the switching stochasticity, which is not controllable. This implies eliminating the intrinsic error is not possible even if various circuits and architectures techniques have been proposed to compensate this stochasticity [56,66].…”

Section: Channel Currentmentioning

confidence: 99%

Neuromorphic Computing Using Emerging Synaptic Devices: A Retrospective Summary and an Outlook

Park

2020

Electronics

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In this paper, emerging memory devices are investigated for a promising synaptic device of neuromorphic computing. Because the neuromorphic computing hardware requires high memory density, fast speed, and low power as well as a unique characteristic that simulates the function of learning by imitating the process of the human brain, memristor devices are considered as a promising candidate because of their desirable characteristic. Among them, Phase-change RAM (PRAM) Resistive RAM (ReRAM), Magnetic RAM (MRAM), and Atomic Switch Network (ASN) are selected to review. Even if the memristor devices show such characteristics, the inherent error by their physical properties needs to be resolved. This paper suggests adopting an approximate computing approach to deal with the error without degrading the advantages of emerging memory devices.

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Section: Channel Currentmentioning

confidence: 99%