Two-photon absorption laser assisted device alteration using continuous wave 1,340 nm laser

Solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a silicon integrated-circuit

“…3(e) and resulted in a SIL-enhanced frequency variation signal injection resolution of approximately 260 nm-taking into account the H2 scaling factor induced through TPA. This value is 30 nm larger than the diffraction-limited spatial resolution performance predicted from Sparrow's criterion; 6,7 however, this deviation can be explained by considering the following limiting physical and optical factors. The first concerns the natural frequency drift associated with ring oscillators.…”

“…TPA is a nonlinear optical effect and although it is difficult to observe using continuous-wave (CW) laser sources, 6 it can be readily demonstrated with a few milliwatts of light using femtosecond pulses from a modelocked laser. The benefits of inducing two-photon carrier generation inside silicon IC's are numerous and have been demonstrated and discussed in detail elsewhere.…”

“…3(d), we measured the maximum stage-delay, using the expression discussed previously, to be $1 ps and calculated the corresponding lateral electrical resolution performance by utilizing a conventional edge-profile approach. 6,7 This analysis is shown in Fig. 3(e) and resulted in a SIL-enhanced frequency variation signal injection resolution of approximately 260 nm-taking into account the H2 scaling factor induced through TPA.…”