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Method for testing electronic self-assembled monolayers using a flip-chip arrangement Liquid immersion lens technology has been applied to internal-node, through-silicon probing of 130 nm integrated circuits. A 100ϫ, 1.3 numerical aperture ͑NA͒ objective with 100 m working distance was specifically designed for this application. An optical resolution of 500 nm is achieved using 1064 nm wavelength light, Ϸ30% improvement over the standard, air immersion, 0.85 NA lens currently used. Significant improvements in wave form quality were also achieved. A Ͼ2ϫ signal to noise ratio improvement is demonstrated on 130 nm technology devices. Probing of 90 nm technology devices indicate that laser voltage probing with liquid immersion lens technology and phase-sensitive detection is extensible to this process node.

A novel method for obtaining diffraction limited high resolution images, and increased signal to noise ratio (SnR), for imaging and probing silicon based complementary metal oxide semiconductor field effect transistor (CMOS, and MOSFET) integrated circuits (IC), is presented. The improved imaging is based on the sub wavelength features’ asymmetric layout, which is dictated by the lithography design rules constrain in CMOS IC and their interactions with polarized light. This asymmetry in layout and the inherent stress engineering on the CMOS IC, produce both dichroism and birefringence in silicon (Si). An elegant design enabled us to obtain two images with orthogonal polarization detection to take advantages of the dichroism and birefringence in Si based CMOS IC. Differential Polarization Image (DPI) is obtained by subtracting the two orthogonal polarization resolved images. On infrared emission microscopes (IREM), DPI in optical imaging mode and DPI plus probing [DPIP] in emission mode, showed 2X or more in terms of optical resolution (imaging mode) and 2X or more SnR (emission-probing mode) improvements. Striking images in probing mode, revealing previously “invisible” emission, were demonstrated.