Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

Abstract

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10−2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

High-Performance Indium–Tin Oxide (ITO) Electrode Enabled by a Counteranion-Free Metal–Polymer Complex

“…44,45,47 The Mo-doped (1. 48 High-performance TCO requires several conditions: (i) removal of impurities, (ii) high-density oxide film, (iii) homogeneity in crystal structures and film morphology, and (iv) controllable elemental doping. 49 The impurities in the PAD process are caused by the carbon residue from the polymer and also by the elemental doping from counteranions bound to the cationic sites of the polymer.…”

“…Su et al prepared Al-doped (9 at. %) ZnO thin films by PAD, exhibiting 7600 Ω/sq for a thickness of 150 nm …”