Über die lichtelektrische und aktinodielektrische Wirkung bei den Erdalkaliphosphoren

Lenard, Philipp; Saeland, Sem

doi:10.1002/andp.19093330303

Cited by 32 publications

(2 citation statements)

References 10 publications

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Section: Introductionmentioning

confidence: 97%

“…The photodielectric effect (PDE) refers to the change in capacitance or dielectric constant upon optical irradiation, which was initially reported by Lenard and Saeland in 1909. 1 Later on, the PDE was observed in a variety of materials, including oxide ferroelectric or piezoelectric materials such as ZnO, 2 Pb 3 O 4 , 3 BiFeO 3 , 4 BaTiO 3 , 5 and BaCoSiO 4 6 and sulfides like CdS, 7 ZnS, 8 and PbS. 9 For oxide semiconductor material, the large increase in dielectric constant arises from irradiationinduced trapped electrons in oxygen vacancies, which result in an increase in conductivity at the insulating boundaries, making the insulation thickness decrease and the capacitance increase.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Observation of Photodielectric Effect in Aluminum Nitride Piezoelectric Films

Yang,

Sun,

Uddin

et al. 2024

ACS Appl. Electron. Mater.

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Piezoelectric semiconductors hold great promise for the development of optoelectronic devices due to the presence of a photodielectric effect (PDE), which has been observed in perovskite ferroelectric ceramics. However, the PDE in wurtzitestructured aluminum nitride (AlN) and how light affects dielectric properties remain unexplored. Here, we observed PDE of AlN films in the low-frequency region around 20 Hz to 1 MHz. The permittivity (ε r ) increased after light irradiation, and the change in ε r increased with larger photon energy, accompanied by an increase in dielectric loss (tan δ). For Sc 0.15 Al 0.85 N, the change in Δε was significantly larger compared to AlN, whereas the variation of tan δ became smaller. The PDE exhibited reversible light-induced switching of piezoelectric polarization, and the time required for ε r to saturate under light illumination was shorter for Sc 0.15 Al 0.85 N than AlN. This work provides a fundamental understanding for photocontrolled piezoelectric properties for exploration of better piezoelectric semiconductors with photodielectric behavior.

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