Ultimate high power operation of 9xx-nm single emitter broad stripe laser diodes

Kaifuchi, Yoshikazu; Yamagata, Yuriko; Nogawa, Ryozaburo; Morohashi, Rintaro; Yamada, Y.; Yamaguchi, Masayuki

doi:10.1117/12.2251145

Cited by 9 publications

(5 citation statements)

References 1 publication

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“…Here, it is assumed that the amplifier chip is made on the basis of an integrated heterostructure, with optimal param eters (thickness and composition of layers) for obtaining high power in the fundamental mode of operation. It will be the heterostructure for a highbrightness diode laser (see, for example, [37][38][39][40]). The basic difference between a diode amplifier and a diode laser lies in the absence of a cavity in the first one.…”

Section: Three-section Amplifier With Different Values Of the Amplitu...mentioning

confidence: 99%

Diode optical amplifier with phase control of the output wave for high-power laser systems with coherent beam combining

Bogatov

Drakin

2019

J. Phys. D: Appl. Phys.

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A three-section optical diode amplifier is simulated, whose sections have different amplitude-phase coupling coefficients R (linewidth enhancement factors). We show that it is possible to change the output wave phase for a constant output power due to only a difference in the value of this coefficient. In a single-mode amplifier, the first section has a horizontal waveguide formed by the gain (gainguided), and the other two sections are formed by change of the refractive index (index-guided). The values of the current in the first two sections are found, at which the phase changes by more than 2π at a constant output power of 2W. Such amplifiers can be integrated into single-crystal bars, which makes them adaptive for use in kilowatt laser systems with a coherent combining of beams.

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Section: Three-section Amplifier With Different Values Of the Amplitu...mentioning

confidence: 99%

Diode optical amplifier with phase control of the output wave for high-power laser systems with coherent beam combining

Bogatov

Drakin

2019

J. Phys. D: Appl. Phys.

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“…Several companies had already produced commercially available 780–1064 nm high-power LDs with various geometric arrangements such as single emitters and bars (Chen et al , 2014; Morales et al , 2016). While GaAs-based LDs tend to have high emission power and high efficiencies, the series resistance associated with the ohmic contact still limits their performance to a certain extent (Tahamtan et al , 2011; Zediker et al , 2017; Ladugin et al , 2017). In addition, the series resistance not only affects the operating voltages of the LD devices but also their optical output power, conversion efficiency and thermal stability (Tahamtan et al , 2011).…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic characterization of laser diodes with different electrode structures

Lin

Zhao

et al. 2022

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Purpose This paper aims to improve the device performance from the perspective of reducing ohmic contact resistance; the effects of different electrode structures and alloying parameters on the series resistance and power-current-voltage of laser diodes (LDs) have been investigated in this paper. Design/methodology/approach Four groups of p-GaAs side metal electrodes with different metal layer arrangements and thicknesses are fabricated for the investigated LDs. The investigated p-GaAs side electrodes are based on Ti/Pt/Au material and the n-GaAs side metal electrodes all have a same structure of Ni/Ge/Ni/Au/Ti/Pt/Au. The LDs with different electrodes were alloyed at 380°C for 60 s and 420°C for 80 s. Findings The experimental results show that the series resistance decreases by 14%–20%, the output power increases by 2%–2.2% and the conversion efficiency increases by 1.69%–2.16% for the LDs prepared with optimized alloying parameters (420°C for 80 s). The laser diode with p-GaAs side Ti/Pt/Au electrode of 30/70/100 nm has the best device characteristics under both annealing conditions. Originality/value The utilization of this improvement on ohmic contact property in electrode is not only very important for upgrading high-power LDs but also helpful for GaAs-based microelectronic devices such as HBT and monolithic microwave integrated circuit.

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“…The inhomogeneously distributed carriers are important at room temperature at very high injection current densities (pulsed operating regime) whereas the carriers generated by the thermal escape are likely to dominate at more modest currents and elevated temperatures, which is often the case in the continuous wave (CW) regime. The accumulation of spatially inhomogeneous carriers is strongly reduced by using a waveguide structure in which the active layer is positioned asymmetrically, near the p-emitter [1][2][3][4][5][6]. In this case, the p-side of the OCL (the part between the active layer and the p-emitter, see inset to figure 1), in which the inhomogeneous carriers accumulate more easily [7], is narrow, in extreme cases almost non-existent.…”

Section: Introductionmentioning

confidence: 99%

Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by high doping of the n-waveguide

Ryvkin¹,

Avrutin²,

Kostamovaara³

2018

Semicond. Sci. Technol.

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We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier leakage from the active layer and the associated optical losses in III-V semiconductor lasers. The effect is particularly pronounced in devices operating at the wavelength region where the free hole absorption cross-section is much greater than that of free electrons. This is predicted to decrease the threshold current and improve the output efficiency of the lasers. An example of a bulk InGaAsP/InP pulsed lasers is used to demonstrate that lasers with highly doped n-InGaAsP side of the waveguide can retain high output powers at ambient temperatures substantially above room temperature.

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Ultimate high power operation of 9xx-nm single emitter broad stripe laser diodes

Cited by 9 publications

References 1 publication

Diode optical amplifier with phase control of the output wave for high-power laser systems with coherent beam combining

Diode optical amplifier with phase control of the output wave for high-power laser systems with coherent beam combining

Optoelectronic characterization of laser diodes with different electrode structures

Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by high doping of the n-waveguide

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