2015
DOI: 10.3390/s151229809
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Ultra-Compact 100 × 100 μm2 Footprint Hybrid Device with Spin-Valve Nanosensors

Abstract: Magnetic field mapping with micrometric spatial resolution and high sensitivity is a challenging application, and the technological solutions are usually based on large area devices integrating discrete magnetic flux guide elements. In this work we demonstrate a high performance hybrid device with improved field sensitivity levels and small footprint, consisting of a ultra-compact 2D design where nanometric spin valve sensors are inserted within the gap of thin-film magnetic flux concentrators. Pole-sensor dis… Show more

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Cited by 13 publications
(6 citation statements)
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“…Besides MTJs, highly compact spin valve (SV) sensors have also been fabricated and integrated with CoZrNb MFC. The sensitivity was increased from 0.18%/mT to 0.37%/mT with a gain of 20.7 [72].…”
Section: Integration With Magnetic Flux Concentrator (Mfc)mentioning
confidence: 99%
“…Besides MTJs, highly compact spin valve (SV) sensors have also been fabricated and integrated with CoZrNb MFC. The sensitivity was increased from 0.18%/mT to 0.37%/mT with a gain of 20.7 [72].…”
Section: Integration With Magnetic Flux Concentrator (Mfc)mentioning
confidence: 99%
“…MFC made of soft ferromagnetic materials (e.g., NiFe or amorphous Co based alloys) can realize significant sensitivity enhancement to pT level at room temperature [ 77 , 78 , 79 , 80 , 81 ]. In the work presented by Leitao et al [ 81 ] ( Figure 11 ), an ultra-compact sensor consisting of nanometric SV sensor placed within the gap of 6000 Å–thick thin-film MFC element was designed. As shown in Figure 11 b, a maximum gain of 20.7 was obtained for pole-sensor distance of 400 nm with sensitivity increased from 0.18%/mT to 3.7%/mT.…”
Section: Integrated Gmr Technologies With Enhanced Performancementioning
confidence: 99%
“… ( a ) Illustration of an integrated device combing SV sensor and MFCs; ( b ) Transfer curves comparing the isolated SV sensor with the corresponding device including the MFC [ 81 ]. …”
Section: Figurementioning
confidence: 99%
“…To obtain such a configuration, one electrode, the reference layer, is usually pinned through a synthetic antiferromagnet (SAF) structure [ 14 ], while the anisotropy of the free (sensing) layer is controlled through shape anisotropy [ 15 ] or through a magnetic biasing field. However, these solutions require, in most cases, a complex device design, often with the introduction of permanent magnets [ 16 , 17 ] or the application of external fields [ 18 ]. Another strategy, typically employed in MTJs, is the growth of a free layer with a superparamagnetic behavior or displaying perpendicular magnetic anisotropy (PMA) [ 15 , 19 , 20 ], resulting in a hysteresis free, linear magnetization vs. external magnetic field (M vs. H) curve.…”
Section: Introductionmentioning
confidence: 99%