Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

Abstract

Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline In x Ga 1 −x Sb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric In x Ga 1− x Sb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm 2 V −1 s −1 for In 0.09 Ga 0.91 Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In 0.28 Ga 0.72 Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W −1 and external quantum efficiency of 4.8 × 10 6 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.

Flexible Near‐Infrared InGaSb Nanowire Array Detectors with Ultrafast Photoconductive Response Below 20 µs

“…This sub-linear relationship between the photocurrent and the light intensity is commonly observed in semiconductorbased photodetectors owing to the complex carrier charge transport processes, such electron-hole generation, trapping and recombination. [28] Importantly, this β value is comparable to that obtained from the NW devices fabricated on silicon substrates, [22] indicating that the assembled NW parallel arrays on plastics do not induce any adverse effect on the photoresponse properties of In 0.28 Ga 0.72 Sb NWs. At the same time, responsivity is another important figure-of-merit to assess the photodetector performance.…”

“…Synthesis and Characterization of Nanowires: The detailed synthesis procedures of In x Ga 1−x Sb NWs were reported elsewhere. [22] In brief, the entire growth process was performed in a two-heating zone horizontal furnace with a quartz tube of one inch in diameter. Si/SiO 2 (50 nm thick thermal oxide) wafer pieces were utilized as the growth substrates.…”

“…[20] For the optical communication band, antimonide-based NWs are widely exploited as active materials for optoelectronic devices due to their high carrier mobility and small direct band gap. [19,[21][22][23][24] For instance, Ma et al fabricated individual NW photodetectors on silicon using GaSb/GaInSb p-n heterojunction NW channels, where the devices were capable of operating at room temperature, exhibiting high external quantum efficiency of 10 4 , high responsivity of 10 3 A W −1 and short response time of 2 ms under the illumination of 1550 nm light. [19] Nevertheless, these complicated NW heterojunctions may not be favorable and applicable for large-scale device integration.…”

High-speed III-V nanowire photodetector monolithically integrated on Si

“…Furthermore, the small size of NW detectors results in a capacitance in the sub-fF regime, which is required for both low-power and high-speed operation. Different fabrication techniques have been pursued from growing III–V NWs on III–V substrates 17 – 19 to catalyzed growth on Si using Au particles 20 , 21 or selective area III–V growth on Si 15 , 22 – 24 . Existing NW technologies however, either result in vertically oriented devices 15 , 18 , 23 or when integrated laterally, i.e., lying on the substrate, are based on pick-and-place techniques 17 , 19 , 21 .…”

Ultrasensitive Organic‐Modulated CsPbBr3 Quantum Dot Photodetectors via Fast Interfacial Charge Transfer

“…Therefore, owing to their excellent flexibility, tailorable optoelectronic properties and chemical tunability, organic materials are one of the suitable materials to vertically stack together with colloidal quantum dots (QDs) to form an energy favorable organic/inorganic heterojunction, facilitating an effective interface for charge carrier separation. Recently, researchers have been intensively carried out to combine active QDs with organic materials to form energy favorable junctions for photodetector applications …”