The recently discovered low-load
metal-assisted catalytic etching
(LL-MACE) creates nanostructured Si with controllable and variable
characteristics that distinguish this technique from the conventional
high-load variant. LL-MACE employs 150 times less metal catalyst and
produces porous Si instead of Si nanowires. In this work, we demonstrate
that some of the features of LL-MACE cannot be explained by the present
understanding of MACE. With mechanistic insight derived from extensive
experimentation, it is demonstrated that (1) the method allows the
use of not only Ag, Pd, Pt, and Au as metal catalysts but also Cu
and (2) judicious combinations of process parameters such as the type
of metal, Si doping levels, and etching temperatures facilitate control
over yield (0.065–88%), pore size (3–100 nm), specific
surface area (20–310 m2·g–1), and specific pore volume (0.05–1.05 cm3·g–1). The porous structure of the product depends on
the space-charge layer, which is controlled by the Si doping and the
chemical identity of the deposited metal. The porous structure was
also dependent on the dynamic structure of the deposited metal. A
distinctive comet-like structure of metal nanoparticles was observed
after etching with Cu, Ag, Pd, and, in some cases, Pt; this structure
consisted of 10–50 nm main particles surrounded by smaller
(<5 nm) nanoparticles. With good scalability and precise control
of structural properties, LL-MACE facilitates Si applications in photovoltaics,
energy storage, biomedicine, and water purification.