Ultra high density 3D via RRAM in pure 28nm CMOS process

Hsieh, Ming‐Feng; Liao, Yu-Wei; Chin, Y. L.; Lien, Chenhsin; Chang, Te‐Sheng; Chih, Yu-Der; Natarajan, S.; Tsai, Ming-Jinn; King, Ya‐Chin; Lin, Chrong Jung

doi:10.1109/iedm.2013.6724600

Cited by 53 publications

(25 citation statements)

References 9 publications

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“…This has been demonstrated with Ag-doped methyl-silsesquioxane (MSQ)-based bipolar CBRAM cells [190] and PI:PCBMbased unipolar organic resistive switching cells [191]. Recently, a modified version of 3-D cross-point via structure has been demonstrated for both unipolar TaON and bipolar TiON RRAM devices with standard CMOS processes [192]. Fig.…”

Section: Three-dimensional Integrationmentioning

confidence: 97%

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Reconfigurable Memristive Device Technologies

et al. 2015

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In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo–metallic technologies, and we review the most recent advances in oxidebased memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments

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Section: Three-dimensional Integrationmentioning

confidence: 97%

“…(d) TEM image showing 1D1R integration of the TaON RRAM with TaO x -based diode. Reprinted with permission from[192]. Copyright (2013) IEEE.…”

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confidence: 95%

Reconfigurable Memristive Device Technologies

et al. 2015

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“…The former approach has been actively developed by industry researchers . Hsieh et al presented a high‐density 3D RRAM by embedding a TaON‐based RRAM cell in the via structure with 28 nm CMOS BEOL process . Liu et al presented a stacked 2‐layer 32‐Gb 3D RRAM test chip with a cross‐point structure in the 24 nm process .…”

Section: High‐speed and Scalable Rram Cells And Systemsmentioning

confidence: 99%

Memory materials and devices: From concept to application

Zhang

Wang

Shi

et al. 2020

InfoMat

212

142

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Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate‐induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high‐performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two‐dimensional material‐based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase‐change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review.

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“…This device is fully integrated with standard CMOS processing. Resistance-state switching in unipolar memristive devices [37], [41], [42], [51], [52] is achieved by providing the same voltage polarities but different amplitudes across the two terminals of the memristive device for SET and RESET operations.…”

Section: A Envm Cells Using Memristive Devicesmentioning

confidence: 99%

Challenges and Circuit Techniques for Energy-Efficient On-Chip Nonvolatile Memory Using Memristive Devices

Chang

Lee

Chen

et al. 2015

IEEE J. Emerg. Sel. Topics Circuits Syst.

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Memristive devices have shown considerable promise for on-chip nonvolatile memory and computing circuits in energyefficient systems. However, this technology is limited with regard to speed, power, VDDmin, and yield due to process variation in transistors and memrisitive devices as well as the issue of read disturbance. This paper examines trends in the design of device and circuits for on-chip nonvolatile memory using memristive devices as well as the challenges faced by researchers in its further development. Several silicon-verified examples of circuitry are reviewed in this paper, including those aimed at high-speed, area-efficient, and low-voltage applications.Index Terms-Memristive device, memristor, nonvolatile memory, recent developments in resistive memory (ReRAM), resistive RAM.

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Ultra high density 3D via RRAM in pure 28nm CMOS process

Cited by 53 publications

References 9 publications

Reconfigurable Memristive Device Technologies

Reconfigurable Memristive Device Technologies

Memory materials and devices: From concept to application

Challenges and Circuit Techniques for Energy-Efficient On-Chip Nonvolatile Memory Using Memristive Devices

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