Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

Washio, Katsuyoshi; Ohue, E.; Hayami, R.; Kodama, A.; Shimamoto, H.; Miura, Makoto; Oda, Katsuya; Suzumura, Isao; Tominari, T.; Hashimoto, Takashi

doi:10.1109/iedm.2002.1175951

Cited by 19 publications

(7 citation statements)

References 4 publications

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“…The enhancements in the linearly graded base HBTs are more complicated in character with the enhancements ranging [75][76][77][78][79][80][81][82][83][84]. The lower solid curve was a fit from [75] while the dashed curve is fitted to the Hitachi data from [84].…”

Section: Eg Kb Tmentioning

confidence: 99%

“…Figure24. The cutoff frequency, f T , as a function of the base width, W B , from[75][76][77][78][79][80][81][82][83][84]. The lower solid curve was a fit from[75] while the dashed curve is fitted to the Hitachi data from[84].…”

mentioning

confidence: 99%

“…Figure25. The maximum oscillation frequency, f max , as a function of the base width, W B , from[75][76][77][78][79][80][81][82][83]. The solid curves are calculations on box profile HBTs for different base doping from[75].…”

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confidence: 99%

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Si/SiGe heterostructures: from material and physics to devices and circuits

Paul¹

2004

Semicond. Sci. Technol.

522

333

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Silicon germanium (SiGe) has moved from being a research material to accounting for a small but significant percentage of manufactured semiconductor devices. This percentage is predicted to increase substantially as SiGe begins to be used in complementary metal oxide semiconductor (CMOS) technology in the future to substantially improve performance. It is the development of Si/SiGe heterostructures which has enabled band structure and strain engineering allowing Si/SiGe to be used in many different ways to improve conventional microelectronic device performance along with allowing new concepts to be explored. This paper presents a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system. In particular, the important device technologies in mainstream microelectronics of the SiGe heterostructure bipolar transistor (HBT) and strained-Si CMOS will be reviewed before future device and optoelectronics concepts are explored.

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Section: Eg Kb Tmentioning

confidence: 99%

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confidence: 99%

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Si/SiGe heterostructures: from material and physics to devices and circuits

Paul¹

2004

Semicond. Sci. Technol.

522

333

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“…There has been a recent trend in SiGe HBTs towards 100 nm emitter widths [4][5][6]. As emitter widths move towards 100 nm, some attention has been given to the optimization of the extrinsic polycrystalline electrode to reduce resistance in the narrow emitter contact [7].…”

Section: Introductionmentioning

confidence: 99%

Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy

Scott¹,

Kadow²,

Dong³

et al. 2004

Journal of Crystal Growth

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“…In the recent years bandgap engineering of Si based materials e.g. SiGe or SiGeC has raised considerable attention for various transistor applications [1][2][3]. Boron-doped SiGeC layers have been used as base layer in high frequency heterojunction bipolar transistors (HBTs) where the presence of carbon suppresses the boron diffusion and especially the transient-enhanced diffusion (TED) [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%