Ultra-low stress high reflective film by dual-ion-beam sputtering deposition

Bai, Jinlin; Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Yang, Xiao; Li, Shida; He, Jiahuan; Su, Jianzhong

doi:10.1117/1.oe.61.3.031203

Cited by 2 publications

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“…Over the past two decades, ion beam-assisted deposition (IBAD) has been successfully used to deposit biaxially aligned thin films on non-textured substrates, which plays a very vital role in various applications, such as semiconducting devices, high-temperature superconductor (HTS) tapes, etc. [1][2][3][4][5] The epitaxial growth of HTS tapes requires a textured buffer layer. Critical currents and critical current densities of HTS films are influenced by the performance of the textured buffer layer.…”

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confidence: 99%

Biaxial texture establishment and evolution in IBAD-MgO films under different ion-to-atom ratios

Qu,

Han,

Bai

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, we successfully grown MgO thin films on Y2O3 seed layers by ion beam assisted deposition (IBAD) method and systematically investigated the effects of ion-to-atom ratios (IARs) on the texture evolution of MgO films. It was found that with the increase of IAR, better textured IBAD-MgO films could be obtained at thinner thickness. At low IARs of 0.2, 0.34, and 0.47, biaxial texture without c-axis tilting feature could be observed in MgO films with thicknesses up to 50-60 nm, which is the highest value in our study. On the other hand, for high IARs of 0.66 and 0.79, the biaxial texture of MgO films was optimized at 13 nm and 7 nm, but completely disappeared at 26 nm and 12 nm, respectively. The differentiation in texture evolution process under different ion-to-atom ratios (IARs) provides a crucial reference for elucidating the growth mechanism of IBAD-MgO.

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