Ultra-small and ultra-reliable innovative fuses scalable from 0.35um to 28nm

A 4Kx8 Innovative Fuse OTP on 22-nm FD-SOI

“…However, higher ambient temperature will accelerate the EM so that these two effects compensate each other. If a diode is used as selector in the cell [6]. The diode can conduct more current in high temperatures, while MOS in the peripherals can conduct less current.…”

“…Multiple eFuses, programmed under the same voltage and time, can sometimes show the post-program eFuse without visible damage (EM) [4], a clear cut in the middle (rupture), silicide agglomeration [2]- [3], or even melted, if programming beyond the break point. The break point was shown as on-set of thermal runaway, when the heat generated is more than the heat can be dissipated [6]. Near thermal runaway, the temperature can be very high.…”

“…Any power devices should not be operated in thermal runaway to be reliable, so a fuse should not be programmed this way too. On the other hand, an I-fuse programmed below thermal runaway was shown to be very small and reliable from 0.35µm to 28nms [6]. The Ifuse temperature can be raised to 1, 000 • C or higher to assist programming as shown in electrical-thermal simulations and electrical measurements [6].…”