CMOS single-photon avalanche diodes (SPADs) have recently become an emerging imaging technology for applications requiring high sensitivity and high frame-rate in the visible and near-infrared range. However, a higher photon detection efficiency (PDE), particularly in the 700-950 nm range, is highly desirable for many growing markets, such as eye-safe three-dimensional imaging (LIDAR). In this paper, we report the design and characterization of SPADs fabricated in a 0.16 µm BCD (Bipolar-CMOS-DMOS) technology. The overall detection performance is among the best reported in the literature: 1) PDE of 60% at 500 nm wavelength and still 12% at 800 nm; 2) very low dark count rate of < 0.2 cps/µm 2 (in counts per second per unit area); 3) < 1% afterpulsing probability with 50 ns dead-time; and 4) temporal response with 30 ps full width at half-maximum and less than 50 ps diffusion tail time constant.

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According to recent literature, this paper highlights the relevance of spatial mobility as an explanatory factor of the individual risk of job-education mismatch. To investigate this causal link we use individual information about daily home-to-work commuting time and choices to relocate in a different local area to get a job. Our model takes into account relevant local labour markets features. We control for selective access to employment and test for endogeneity of spatial mobility. Results show a negative impact of commuting time on educational mismatch for upper-secondary graduates, as well as a negative impact of migration/migration distance for university graduates

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