2018
DOI: 10.1109/jstqe.2017.2762464
|View full text |Cite
|
Sign up to set email alerts
|

Single-Photon Avalanche Diodes in a 0.16 μm BCD Technology With Sharp Timing Response and Red-Enhanced Sensitivity

Abstract: CMOS single-photon avalanche diodes (SPADs) have recently become an emerging imaging technology for applications requiring high sensitivity and high frame-rate in the visible and near-infrared range. However, a higher photon detection efficiency (PDE), particularly in the 700-950 nm range, is highly desirable for many growing markets, such as eye-safe three-dimensional imaging (LIDAR). In this paper, we report the design and characterization of SPADs fabricated in a 0.16 µm BCD (Bipolar-CMOS-DMOS) technology. … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

5
85
0

Year Published

2019
2019
2022
2022

Publication Types

Select...
7
2
1

Relationship

4
6

Authors

Journals

citations
Cited by 91 publications
(90 citation statements)
references
References 51 publications
5
85
0
Order By: Relevance
“…On a more general comparison our SPAD is outperformed by the work in [46] which achieves, with a 30 μm circular device, both the highest PDP peak and one of the lowest DCR in the state-of-the-art.…”
Section: B Photon Detection Probabilitymentioning
confidence: 91%
“…On a more general comparison our SPAD is outperformed by the work in [46] which achieves, with a 30 μm circular device, both the highest PDP peak and one of the lowest DCR in the state-of-the-art.…”
Section: B Photon Detection Probabilitymentioning
confidence: 91%
“…Despite the good performance and the wide-active area offered by PMTs and MCPs, they present some limitations for the use in a clinical environment in terms of robustness (high level of illumination may damage photocathodes) and costs. Detector modules based on silicon Single-Photon Avalanche Diode (SPAD) overcome these issues and can fit the application, as they generally exhibit a SPTR lower than 30 ps (FWHM) and a PDE higher than 60% at 500 nm and still 12% at 800 nm [30], [31]. Unfortunately, wide collection area is mandatory in order to improve light harvesting [19].…”
Section: B Sipm-based Single-photon Detectorsmentioning
confidence: 99%
“…The imager developed in this work is fabricated in a 0.16 µm BCD technology, which combines SPADs having state-of-the-art photodetection efficiency (5) , thick oxide front-end transistors for operation up to 5 V excess bias, and high-performance 1.8 V digital logic for core digital processing. The array is organized in 16×16 macropixels, each composed by 2×2 SPADs having independent time-gated front-end circuitry and photon counters, but sharing a single, two-stage Time-to-Digital Converter (TDC).…”
Section: Imager Structure 21 Featuresmentioning
confidence: 99%