Ultra-thin Ta<sub>2</sub>O<sub>5</sub>dielectric film for high-speed bipolar memories

Nishioka, Yasushiro; Homma, N.; Shinriki, Hiroshi; Mukai, K.; Yamaguchi, Ken; Uchida, A.; Higeta, K.; Ogiue, K.

doi:10.1109/t-ed.1987.23181

Cited by 56 publications

(16 citation statements)

References 5 publications

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“…However, SiO2 film has certain limitations. In addition, an extremely thin Ta2OJSiO2 film 7.5 nm thick has been applied to a high speed bipolar memory (13). Ta205 film seems to be an attractive candidate to replace SiO2 because of its dielectric constant of 22-28 (3-7) and its adequate dielectric breakdown strength (8)(9)(10).…”

mentioning

confidence: 99%

Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on Si

Nishioka

Kimura

Shinriki

et al. 1987

J. Electrochem. Soc.

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The chemical structure and dielectric characteristics are investigated for amorphous tantalum pentoxide (Ta20.0 films 6-40 nm thick deposited on Si by reactive sputtering. An x-ray photospectroscopy study shows that a thin SiO~ layer grows at the Ta2Os/Si interface during the deposition. Clear boundaries between the Ta20~, SiO2, and silicon substrate are observed using a cross-sectional transmission electron microscope picture. The measured dielectric constant decreases as the Ta205 film thickness decreases. This is explained by assuming that the SiO2 thickness at the interface is 2.4 nm. The product of this dielectric constant and the electric field at a leakage current of 10 -2 A/cm 2 for the double layers decreases. It goes from 104 to 36 MV/cm as the Ta~O.~ film thickness decreases over a thickness range of about 10-40 nm. However, it remains constant about 10 nm and below. These phenomena are explained by assuming that the leakage current through the Ta20.~ film is limited by bulk limited conduction for films whose thickness exceeds 10 nm. On the other hand, in films tess than 10 nm thick, either direct tunneling or Fowler-Nordheim conduction begins. This conduction is limited by electron injection into the SiO~ at the interface from the Si substrate.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.222.24.34 Downloaded on 2015-03-17 to IP Vol. 134, No. 2 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.222.24.34 Downloaded on 2015-03-17 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.222.24.34 Downloaded on 2015-03-17 to IP

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mentioning

confidence: 99%

Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on Si

Nishioka

Kimura

Shinriki

et al. 1987

J. Electrochem. Soc.

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“…Tavlama sıcaklığı 600 o C değerinin altında olduğu sürece ince filmlerin yapısında dikkate değer bir kristalleşmenin olmadığı daha önce Kimura tarafından bildirilmiştir [18]. Benzer şekilde Nishioka ve grubunun yapmış olduğu çalışmada da 20nm kalınlıklı Ta 2 O 5 ince filmler 1000 o C derecede 30 dakika tavlansa bile amorf yapısının bozulmadan kaldığı gözlenmiştir [20][21]. bölgelerinde farklı sıcaklık değerleri için gözlemlenen doğruların eğimlerinden rahatlıkla bulunur ve üssel ifade m Giuntini denklemi 3.4 ifadesiyle verilir [33].…”

Section: Deneysel Bulgular (Experimental Results)unclassified

Low Temperature Range Dielectric Properties and AC Conductivity Behavior of Ta2O5 Thin Film Capacitor Formed with Sol-Gel Spin Coating Method

Yıldırım

2018

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım Ve Teknoloji

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Kalınlığı 75 nm olan tantal penta oksit (Ta 2 O 5 ) ince film kondansatör Sol-Gel döner kaplama işlemi ile Corning cam taşıyıcılar üzerinde elde edildi ve film kondansatörün dielektrik sabiti ε, dielektrik kayıp faktörü ε ve AC iletkenlik davranışı 193-293 K sıcaklık aralığında, 10 Hz-100 kHz frekans değerlerine bağlı olarak incelendi. Ta 2 O 5 ince film kondansatörün dielektrik sabitinin, 1 kHz standart frekans değerinde, artan sıcaklığa bağlı olarak 7 ve 9 arasında değiştiği bulundu. Dielektrik sabitinin artan frekansla azalmakta ve artan sıcaklıkla artmakta olduğu belirlendi. Maksimum engel yüksekliği W m , farklı sıcaklıklarda dielektrik kayıp faktörü ε" nün frekansa bağlılığından hesaplandı ve değeri sırasıyla 10 Hz-2 kHz ve 2 kHz-12 kHz frekans aralığı için 0,14 eV ve 0,093 eV olarak bulundu. Bu tip dielektrik özellikler taşıyıcı zıplama, yüzeylerarası ve dipolar polarizasyon mekanizmaları ile ilişkilendirildi. Ta 2 O 5 ince film kondansatörün deneysel sonuçları, AC iletkenliğinin frekansa ve sıcaklığa bağlı olduğunu gösterdi. AC iletkenlik davranışının ω s kuvvet yasasına uyduğu ve artan sıcaklıkla s üstel ifadesinin azalmakta olduğu bulundu. AC iletkenliğin düşük frekans bölgesinde sıcaklığa bağlılığının engel üzerinden zıplamayla ilişkilendirilmiş (CBH) modeli ile uyumlu olduğu belirlendi. AbstractThe dielectric constant ε and the dielectric loss factor ε and AC conductivity of 75 nm thickness tantalum pentaoxide (Ta 2 O 5 ) thin film capacitor, produced by sol-gel spin coating process on Corning glass substrates, have been investigated in the frequency range of 10 Hz -100 kHz and the temperature range of 193-293 K. It was found that dielectric constant of the Ta 2 O 5 thin film capacitor changes between 7 and 9 with increasing temperature at 1 kHz standart frequency value. The dielectric constant was found to decrease with increasing frequency and to increase with increasing temperature. The maximum barrier height W m is calculated from the frequency dependence of the dielectric loss ε" at different temperatures. Its value obtained 0.14 eV and 0.093 eV at 10 Hz-2 kHz and 2 kHz-12 kHz frequency range respectively. This type of dielectric properties was associated with a carrier hopping process, interfacial and dipolar polarization processes. The experimental results of the Ta 2 O 5 thin film capacitor indicate that the AC conductivity depend on the frequency and temperature. The AC conductivity behaviour was found to obey the power law ω s with the frequency exponent s decreasing with increasing temperature. It has been determined that the temperature dependence of AC conductivity in the low frequency range is compatible with the Correlated Barrier Hopping (CBH) model.

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“…After the Si wafers were cleaned in diluted hydrofluoric acid to remove the native oxide from the Si surface, amorphous Ta2Os films ranging from 7-40 nm in thickness were reactively sputtered onto the surface. Further details of the film deposition conditions are described in previous publications by the authors (7)(8)(9). The aluminum films used for the electrodes were sputtered onto the Ta2Os films and photolithographically patterned to form capacitors to measure the dielectric characteristics of the films.…”

Section: Methodsmentioning

confidence: 99%

Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

Nishioka

Shinriki

Mukai

1989

J. Electrochem. Soc.

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Ultra-thin Ta₂O₅dielectric film for high-speed bipolar memories

Cited by 56 publications

References 5 publications

Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on Si

Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on Si

Low Temperature Range Dielectric Properties and AC Conductivity Behavior of Ta2O5 Thin Film Capacitor Formed with Sol-Gel Spin Coating Method

Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

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Ultra-thin Ta2O5dielectric film for high-speed bipolar memories

Cited by 56 publications

References 5 publications

Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on Si

Dielectric Characteristics of Double Layer Structure of Extremely Thin Ta2 O 5 / SiO2 on Si

Low Temperature Range Dielectric Properties and AC Conductivity Behavior of Ta2O5 Thin Film Capacitor Formed with Sol-Gel Spin Coating Method

Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

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Ultra-thin Ta₂O₅dielectric film for high-speed bipolar memories