Ultraclean Patterned Transfer of Single-Layer Graphene by Recyclable Pressure Sensitive Adhesive Films

Kim, Sang Jin; Choi, Teajun; Lee, Bora; Lee, Sunwoo; Choi, Kyoungjun; Park, Jong Bo; Yoo, Je Min; Choi, Yong Seok; Ryu, Je-Kwang; Kim, Philip; Hone, James; Hong, Byung Hee

doi:10.1021/acs.nanolett.5b00440

Cited by 108 publications

(113 citation statements)

References 27 publications

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“…Dry transfer of graphene using polydimethylsiloxane (PDMS) [15][16][17][18][19][20][21][22] , thermal release tape [23][24][25] , electrostatic process 26 and pressure sensitive adhesive 27 have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Transfer printing of CVD graphene FETs on patterned substrates

et al. 2015

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We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCAcleaning step to improve the surface quality. In contrast to conventional fabrication routes where lithographic steps are performed after the transfer, here graphene is transferred to a pre-patterned substrate. The resulting FET devices display nearly zero Dirac voltage, and the contact resistance between the graphene and metal contacts is on the order of 910 ± 340 Ω µm. This approach enables formation of conducting graphene channel lengths up to one millimeter. The resist-free transfer process provides a clean graphene surface that is promising for use in high sensitivity graphene FET biosensors.

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Section: Introductionmentioning

confidence: 99%

Transfer printing of CVD graphene FETs on patterned substrates

et al. 2015

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“…In contrast, on the graphene grown on Cu/Ni (111) film at higher temperature (say, 1000 °C), corrugations and steps can be observed, as shown in AFM image (Figure b) and SEM image (Figure e). The corrugations and steps normally form at the process of cooling from high temperature and could easily induce winkle and fold in graphene after transfer . In addition, low growth temperature can decrease the contamination of silica particles.…”

mentioning

confidence: 99%

Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition

Zhang

Jiang

et al. 2019

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The future electronic application of graphene highly relies on the production of large‐area high‐quality single‐crystal graphene. However, the growth of single‐crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 °C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single‐crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 °C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 °C have a carrier mobility up to ≈9700 cm2 V−1 s−1 at room temperature. This work shines light on a way toward a much lower temperature growth of high‐quality graphene in single crystallinity, which could benefit future electronic applications.

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“…[25,26] In addition, transfer of graphene with negligible residue can also be realized by using adhesive tapes. [27] In this report, we demonstrate a room-temperature PMMA-assisted transfer process that has led to a clean surface for the CVD graphene. The cleanliness results in a significantly enhanced SERS performance of graphene decorated with Au NPs.…”

Section: Introductionmentioning

confidence: 82%

Scalable residue-free graphene for surface-enhanced Raman scattering

Hinnemo

Ahlberg

Hägglund

et al. 2016

Carbon

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Scalable residue-free graphene for surface-enhanced Raman scattering. Abstract: A room-temperature polymer-assisted transfer process is developed for large-area, single-layer graphene grown by means of chemical vapor deposition (CVD). This process leads to transferred graphene layers free of polymer contamination. The absence of polymer residues boosts the surface-enhanced Raman scattering (SERS) of the CVD graphene with gold nanoparticles (Au NPs) deposited atop by evaporation. The SERS enhancement of the CVD graphene reaches 120 for the characteristic 2D peak of graphene, the highest enhancement factor achieved to date, when the Au NPs are at the threshold of percolation. Our simulation supported by experiment suggests that the polymer residues persistently present on the graphene transferred by the conventional polymer-assisted method are equivalent to an ultrathin film of less than 1 nm thickness. The presence of polymer residues drastically reduces SERS due to the separation of the Au NPs from the underlying graphene. The scalability of CVD graphene opens up for the possibility of graphene-based SERS sensors.

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Ultraclean Patterned Transfer of Single-Layer Graphene by Recyclable Pressure Sensitive Adhesive Films

Cited by 108 publications

References 27 publications

Transfer printing of CVD graphene FETs on patterned substrates

Transfer printing of CVD graphene FETs on patterned substrates

Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition

Scalable residue-free graphene for surface-enhanced Raman scattering

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