Ultrafast carrier and phonon dynamics in thin films of bismuth telluride on a flexible substrate

Pandey, Animesh; Sharma, Alka; Vashistha, Nikita; Kumar, Sumit; Yadav, Reena; Kaur, Mandeep; Kumar, Mahesh; Husale, Sudhir

doi:10.1016/j.optmat.2022.112294

Cited by 3 publications

(1 citation statement)

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“…2D layered materials like MoS 2 , graphene, Bi 2 Te 3 , and Bi 2 Se 3 , have been intensively investigated and shown promising applications in a variety of disciplines. [17][18][19] Topological insulator (TI) based materials show exotic electronic properties with an insulating bulk gap and gapless edge surface states, 20 and have potential applications in optoelectronics, 21 spintronics, thin-film-based tunable terahertz absorption, TI-based terahertz modulators, terahertz detectors, and terahertz generation. 20,[22][23][24] A field effect transistor (FET) based on 3D TI nanowires outperforms typical semiconductor nanowire transistors in terms of performance.…”

Section: Introductionmentioning

confidence: 99%

Broadband THz absorption using nanosheets of Bi₂Te₃ grown on a transparent conductor

et al. 2023

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Section: Introductionmentioning

confidence: 99%

Broadband THz absorption using nanosheets of Bi₂Te₃ grown on a transparent conductor

et al. 2023

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Probing photocarrier dynamics in a Bi2Te3–Te eutectic p–n junction with a laser terahertz emission microscope

et al. 2023

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Bismuth telluride (Bi2Te3)-based heterostructures have attracted considerable attention owing to their interesting anisotropic properties and expected higher thermoelectric performance. Therefore, exploring the nature of the carrier dynamics in these heterostructures has been an important subject in the design and optimization of advanced materials. In the present study, hot carrier injection and its subsequent spatiotemporal behavior in a multilayered crystalline Bi2Te3–Tellurium (Te) eutectic composite were studied using a laser terahertz (THz) emission microscopy (LTEM). The THz emission electric fields at the Bi2Te3–Te interface were polarized perpendicular to the interface. The polarities of these waveforms reveal the direction of the electric field between the Bi2Te3 and Te regions, indicating the carrier types of these components and the p–n junction formed at the interface. In addition, in the Te region, a strong THz emission with an electric field polarized parallel to the interface was observed. This unique THz emission can be qualitatively explained through hot photocarrier anisotropic transport by considering the effective mass of electrons and holes. LTEM clarified the local carrier dynamics in the microstructures and revealed the potential distribution and anisotropic transport properties. These findings contribute to the exploration of eutectic heterostructures as new functional materials and provide new avenues for cutting-edge thermoelectric and photovoltaic devices.

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A room-temperature ultrafast carrier dynamical study and thickness-dependent investigation of WTe₂thin films on a flexible PET substrate

Verma,

Kumar,

Yadav

et al. 2024

Phys. Scr.

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In the current era of increasing demand for optoelectronic-based devices with ultra-rapid response, it is important to understand the processes associated with the relaxation dynamics of hot carriers and transient electrical properties of WTe2 material under photoexcitation of charge carriers. In this work, using femtosecond laser pump–probe spectroscopy at room temperature we performed the transient absorption measurement on sputtered deposited WTe2 thin films having four different thicknesses to study dynamics associated with the relaxation of their hot carriers. The relaxation dynamics of photoexcited charge carriers undergo three exponential decay components associated with electron–phonon thermalization in the conduction band and phonon-assisted electron–hole recombination between the electron and hole pocket. The thickness-dependent investigation of WTe2 thin films reveals that the electron–hole recombination process is more prominent in thicker films than in thinner films, supporting previously published theoretical and experimental conclusions. The Ultrafast study of WTe2 thin films suggests that it is a suitable material for future ultrafast optoelectronic-based device applications.

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Ultrafast carrier and phonon dynamics in thin films of bismuth telluride on a flexible substrate

Cited by 3 publications

References 40 publications

Broadband THz absorption using nanosheets of Bi₂Te₃ grown on a transparent conductor

Broadband THz absorption using nanosheets of Bi₂Te₃ grown on a transparent conductor

Probing photocarrier dynamics in a Bi2Te3–Te eutectic p–n junction with a laser terahertz emission microscope

A room-temperature ultrafast carrier dynamical study and thickness-dependent investigation of WTe₂thin films on a flexible PET substrate

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Ultrafast carrier and phonon dynamics in thin films of bismuth telluride on a flexible substrate

Cited by 3 publications

References 40 publications

Broadband THz absorption using nanosheets of Bi2Te3 grown on a transparent conductor

Broadband THz absorption using nanosheets of Bi2Te3 grown on a transparent conductor

Probing photocarrier dynamics in a Bi2Te3–Te eutectic p–n junction with a laser terahertz emission microscope

A room-temperature ultrafast carrier dynamical study and thickness-dependent investigation of WTe2thin films on a flexible PET substrate

Contact Info

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Resources

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Broadband THz absorption using nanosheets of Bi₂Te₃ grown on a transparent conductor

Broadband THz absorption using nanosheets of Bi₂Te₃ grown on a transparent conductor

A room-temperature ultrafast carrier dynamical study and thickness-dependent investigation of WTe₂thin films on a flexible PET substrate