Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime

Abstract

(GaIn)(NAs) vertical-cavity surface-emitting lasers for room-temperature emission at 1.3 μm wavelength are designed and grown by metal-organic vapor-phase epitaxy using dimethylhydrazine and tertiarybutylarsine. Room-temperature operation at wavelengths up to 1.285 μm is achieved with low optical pumping thresholds between 1.6 and 2.0 kW/cm2. Stimulated emission dynamics after femtosecond optical pumping are measured and compare favorably with results on (GaIn)As/Ga(PAs)-based structures.

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

“…First, as the structure is undoped, growth and processing are simplified and absorption loss is minimised. Second, longer mode-matched cavities can be used and tailored to achieve higher power output [7,10], improved dynamics [11] or add some functionalities like wavelength control [12].…”

Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure

“…[1][2][3][4][5][6][7][8] Compared with InGaAsP lasers at the same emission wavelength, GaInNAs lasers have the smaller temperature sensitivity of threshold current, and hence, higher characteristic temperature T 0 as predicted theoretically. 1,9 However, the recent reports show that the defect-related nonradiative recombination is still severe in this material 10 due to the difficulty in the growth of highquality nitride compounds.…”

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

“…Первая состоит в со-здании монолитных полупроводниковых гетероструктур с распределенными брэгговскими отражателями (РБО) на основе пары материалов GaAs/AlGaAs, с упругона-пряженными квантовыми ямами GaInAsN/GaAsN [1][2][3][4][5][6][7], GaInNAsSb/GaNAsSb [8][9][10][11][12] или квантовыми точками InAs/InGaAs [13][14][15][16][17][18][19]. Такие гетероструктуры выращи-ваются на подложках GaAs.…”