Ultrafine ZnS Nanobelts as Field Emitters

Fang, Xiaosheng; Bando, Yoshio; Shen, Guozhen; Ye, Changhui; Gautam, Ujjal K.; Costa, Pedro M. F. J.; Chen, Zhi; Tang, Chengchun; Golberg, Dmitri

doi:10.1002/adma.200700078

Cited by 246 publications

(181 citation statements)

References 47 publications

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“…[2,3] This material has been extensively investigated for a number of applications such as flat panel displays, field-emission devices, light-emitting diodes, and phosphors. [4][5][6][7] Doping semiconductors provides a convenient route towards tuning their electronic properties. ZnS is usually doped with transition metal ions such as Mn or Cu in the thin film or bulk form; alternatively, it is also sometimes doped with group IIIA metals such as Al, Ga, or In.…”

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confidence: 99%

Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa₂O₄ Nanotubes

et al. 2008

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Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa₂O₄ Nanotubes

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“…Tailoring the color output of nanomaterials is very important for their applications as light emitting displays, field emitters, 1,2 lasers, sensors 3 and optoelectronic devices to multiplexed biological labeling. [4][5][6][7] Zinc sulfide (ZnS) is a suitable semiconductor as a host matrix for a wide variety of dopants on account of its wide energy band gap.…”

Section: Introductionmentioning

confidence: 99%

Visible emission characteristics from different defects of ZnS nanocrystals

Wang

Shi

Feng

et al. 2011

Phys. Chem. Chem. Phys.

171

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Various sized ZnS nanocrystals were prepared by treatment under H 2 S atmosphere. Resonance Raman spectra indicate that the electron-phonon coupling increases with increasing the size of ZnS. Surface and interfacial defects are formed during the treatment processes. Blue, green and orange emissions are observed for these ZnS. The blue emission (430 nm) from ZnS without treatment is attributed to surface states. ZnS sintered at 873 K displays orange luminescence (620 nm) while ZnS treated at 1173 K shows green emission (515 nm). The green luminescence is assigned to the electron transfer from sulfur vacancies to interstitial sulfur states, and the orange emission is caused by the recombination between interstitial zinc states and zinc vacancies. The lifetimes of the orange emission are much slower than that of the green luminescence and sensitively dependent on the treatment temperature. Controlling defect formation makes ZnS a potential material for photoelectrical applications.

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“…ZnS was one of the first semiconductors discovered and is of major interest in biomedical, electronic and photovoltaic devices due to its luminescent and catalytic properties. 13,14 It has been used as an important component in ultraviolet light emitting diodes,…”

Section: Introductionmentioning

confidence: 99%

Anti-bacterial activity of indoor-light activated photocatalysts

Synnott

Seery²,

Hinder

et al. 2013

Applied Catalysis B: Environmental

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Nanocrystalline photocatalysts, prepared under ambient conditions using a microwave assisted synthesis, show indoor light photocatalytic activity for the degradation of S. aureus and E. coli. The zinc sulfide (ZnS) nanomaterials, prepared by a microwave assisted synthesis, are shown to be cubic blende structure with an average crystallite size of 4 -6 nm. The anti-bacterial activity of these nanomaterials is investigated under irradiation from a 60 -watt light bulb and photocatalytic activity is revealed to be due to the defects present in the crystal structure. The ZnS shows anti-bacterial action as both a bacteriostatic and bacteriocidal (88 % reduction in the amount of bacteria in 5 h) material and the methods of bacterial degradation on the ZnS is discussed. The anti-bacterial actions of these materials were also compared with commercial ZnS and Evonik-Degussa P-25. A detailed mechanism for the light absorption in the visible light region of the microwave prepared ZnS is proposed based on the luminescence spectroscopy.

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Ultrafine ZnS Nanobelts as Field Emitters

Cited by 246 publications

References 47 publications

Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa₂O₄ Nanotubes

Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa₂O₄ Nanotubes

Visible emission characteristics from different defects of ZnS nanocrystals

Anti-bacterial activity of indoor-light activated photocatalysts

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Ultrafine ZnS Nanobelts as Field Emitters

Cited by 246 publications

References 47 publications

Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa2O4 Nanotubes

Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa2O4 Nanotubes

Visible emission characteristics from different defects of ZnS nanocrystals

Anti-bacterial activity of indoor-light activated photocatalysts

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Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa₂O₄ Nanotubes

Ga‐Doped ZnS Nanowires as Precursors for ZnO/ZnGa₂O₄ Nanotubes