Ultrahigh-Density Nanowire Lattices and Circuits

Melosh, Nicholas A.; Boukai, Akram; Diana, Frédéric S.; Gerardot, Brian D.; Badolato, Antonio; Petroff, P. M.; Heath, James R.

doi:10.1126/science.1081940

Cited by 841 publications

(643 citation statements)

References 10 publications

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“…SNAP translates the atomic control over the film thicknesses within a thin film superlattice into control over the width and spacing of NWs. [23][24][25] SNAP is utilized to …”

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confidence: 99%

Long, Highly-Ordered High-Temperature Superconductor Nanowire Arrays

Heath

2008

Nano Lett.

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The preparation and electrical properties of high-temperature superconductor nanowire arrays are reported for the first time. YBa 2 Cu 3 O 7-δ nanowires with widths as small as 10 nm (much smaller than the magnetic penetration depth) and lengths up to 200 µm are studied by four-point electrical measurements. All nanowires exhibit a superconducting transition above liquid nitrogen temperature and a transition temperature width that depends strongly upon the nanowire dimensions. Nanowire size effects are systematically studied, and the results are modeled satisfactorily using phase-slip theories that generate reasonable parameters. These nanowires can function as superconducting nanoelectronic components over much wider temperature ranges as compared to conventional superconductor nanowires.A key question regarding the use of superconductors in nanoelectronic circuits is whether there is a critical size limit beyond which superconductivity can not be sustained. 1-3 A superconducting wire becomes quasi-one-dimensional (quasi-1D) when its width (w) is comparable to or smaller than the material-dependent Ginzburg-Landau coherence length (>∼100 nm for elemental superconductors) and magnetic penetration depth λ (∼40 nm for elemental superconductors). For bulk superconductors, the electrical resistance drops precipitously to zero below the superconducting transition temperature (T c ). For quasi-1D superconductors, the resistance decreases gradually below T c due to phase-slip processes. 2,4 This may result in resistive or insulating behaviors for thin (∼10 nm) wires when temperature approaches zero. 1,2 Narrow width (w ∼ 10 nm) nanowires (NWs) made from elemental superconductors 3,5-7 and from the binary alloy MoGe 1,2,8 are all quasi-1D systems, and strong suppression of superconductivity by phase-slip processes has been observed in these systems. The very low T c (typically below liquid helium temperature) limits their potential applications as zero-electrical resistance conductors or active components in nanoelectronic circuits. [8][9][10][11][12] In comparison, the short (∼1 nm) that characterizes high-temperature superconductor (HTS) materials 13 may reduce the influence on superconductivity of phase slip processes in HTS NWs, and the expected significantly higher T c should uniquely enable applications of HTS NW materials.However, achieving high-temperature superconductivity in NWs requires achieving the correct stoichiometry and the correct perovskite-like crystal structures of the HTS materials. This renders many superconductor NW fabrication methods 1,5,6,14,15 inapplicable, and so little has been reported in this area. Short HTS NWs (w ∼50 nm) have been synthesized, but superconductivity was only tested through magnetization measurements of powders of these materials. 16,17 Patterning HTS NWs from epitaxially grown HTS thin films is also challenging: HTS materials are unstable toward processing steps involving acid, water, or moderately elevated temperatures. In addition, for patterning, HTS films are...

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“…SNAP translates the atomic control over the film thicknesses within a thin film superlattice into control over the width and spacing of NWs. [23][24][25] SNAP is utilized to …”

mentioning

confidence: 99%

Long, Highly-Ordered High-Temperature Superconductor Nanowire Arrays

Heath

2008

Nano Lett.

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“…Si nanowires (SiNWs) have been produced by various techniques [1][2][3][4][5][6][7][8][9][10]. Broad applications of SiNWs for nanoelectronic or nanothermoelectronic devices or for physical-property testing systems have been proposed [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

et al. 2010

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Abstract:Integrated freestanding single-crystal silicon nanowires with typical dimension of 100 nm × 100 nm × 5 μm are fabricated by conventional 1:1 optical lithography and wet chemical silicon etching. The fabrication procedure can lead to wafer-scale integration of silicon nanowires in arrays. The measured electrical transport characteristics of the silicon nanowires covered with/without SiO2 support a model of Fermi level pinning near the conduction band. The I-V curves of the nanowires reveal a current carrier polarity reversal depending on Si-SiO2 and Si-H bonds on the nanowire surfaces.

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“…As one of the most important one-dimensional (1D) nanometer materials, the metal nanowires have been expected to play an important role in future electronic, optical and nanoelectromechanical devices [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

The uniaxial tensile deformation of Ni nanowire: atomic-scale computer simulations

Zhu

Shao

et al. 2005

Physica E: Low-dimensional Systems and Nanostructures

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The mechanical deformations of nickel nanowire subjected to uniaxial tensile strain at 300 K are simulated by using molecular dynamics with the quantum corrected Sutten-Chen many-body force field. We have used common neighbor analysis method to investigate the structural evolution of Ni nanowire during the elongation process. For the strain rate of 0.1%/ps, the elastic limit is up to about 11% strain with the yield stress of 8.6 GPa. At the elastic stage, the deformation is carried mainly through the uniform elongation of the distances between the layers (perpendicular to the Z-axis) while the atomic structure remains basically unchanged. With further strain, the slips in the {1 1 1} planes start to take place in order to accommodate the applied strain to carry the deformation partially, and subsequently the neck forms. The atomic rearrangements in the neck region result in a zigzag change in the stress-strain curve; the atomic structures beyond the region, however, have no significant changes. With the strain close to the point of the breaking, we observe the formation of a one-atom thick necklace in Ni nanowire. The strain rates have no significant effect on the deformation mechanism, but have some influence on the yield stress, the elastic limit, and the fracture strain of the nanowire. r

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Ultrahigh-Density Nanowire Lattices and Circuits

Cited by 841 publications

References 10 publications

Long, Highly-Ordered High-Temperature Superconductor Nanowire Arrays

Long, Highly-Ordered High-Temperature Superconductor Nanowire Arrays

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

The uniaxial tensile deformation of Ni nanowire: atomic-scale computer simulations

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