Ultralight High‐Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic

Shahrjerdi, Davood; Bedell, Stephen W.; Bayram, Can; Lubguban, Cristina C.; Fogel, K.; Lauro, Paul; Ott, J. A.; Hopstaken, Marinus; Gayness, Michael; Sadana, D. K.

doi:10.1002/aenm.201200827

Cited by 76 publications

(72 citation statements)

References 23 publications

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“…The nano-voids in the carbon fiber are less than those in the cotton fabrics; therefore, the Si signals inside the carbon fiber core are weak, although non-zero, implying some of Si has been infiltrated inside the carbon fibers before the outer surface is coated with a layer of Si. To check whether the P signal can be detected, we performed EDS comparison measurement on a phosphorus doped (same doping concentration as the doped Si 20 or inorganic materials 21,22 on different kinds of flexible substrates, such as polyimide polymers and metal foils, followed by transfer and attachment to fabrics has been investigated. 23 However, it remains a challenge to directly integrate solar function into fabrics rather than transferring from other substrates.…”

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Cheng

Grede

et al. 2018

APL Materials

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Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Cheng

Grede

et al. 2018

APL Materials

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“…are considered as the best candidates for realizing bendable and light-weight solar cells on account of their low temperature processability and inexpensive process cost. [ 30,31 ] However, organic solar cells still suffer from drawbacks, including low power conversion effi ciencies and poor long-term stability. [ 32 ] To overcome these challenges, light-weight and fl exible solar cells based on III-V semiconductors using the ELO technique have been demonstrated.…”

Section: Doi: 101002/aenm201400589mentioning

confidence: 99%

A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells

Choi

Kim

Heo

et al. 2014

Advanced Energy Materials

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The effects of epitaxial materials and solar cell design on the performance of solar cells grown by the multilayer approach are investigated. The novel solar cell structure with a p‐on‐n type configuration suggested exhibits improved uniformity in the photovoltaic performance because of the suppression of Zn diffusion. This approach provides routes to achieve further improvements and acts as a guideline for the commercialization of the multilayer technique.

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“…To construct efficient 2T tandems, more attractive to commercial products, current matching between series‐connected subcells is required by their bandgap adjustment. GaAs ( E g ≈ 1.4 eV) PV has been successfully extended to monolithic 2T tandem by epitaxially growing a wide‐bandgap III–V semiconductor‐based PV structure such as indium gallium phosphide (InGaP) ( E g , 1.80–1.90 eV) on the GaAs single‐junction structure as a top‐cell using metalorganic chemical vapor deposition (MOCVD) process . However, this approach increases overall fabrication cost (e.g., from ≈1240 to ≈1660 $ m −2 ), and a complicated III–V tunnel junction (TJ) diode to connect those subcells without parasitic absorption and recombination loss are inevitable.…”

Section: Introductionmentioning

confidence: 99%

Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells

Kim

Han

et al. 2019

Advanced Energy Materials

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Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their merits such as thin‐film feasibility, flexibility, and high efficiency. To further increase their performance, a wider bandgap PV structure such as indium gallium phosphide (InGaP) has been integrated in two‐terminal (2T) tandem configuration. However, it increases the overall fabrication cost, complicated tunnel‐junction diode connecting subcells are inevitable, and materials are limited by lattice matching. Here, high‐efficiency and stable wide‐bandgap perovskite PVs having comparable bandgap to InGaP (1.8–1.9 eV) are developed, which can be stable low‐cost add‐on layers to further enhance the performance of GaAs PVs as tandem configurations by showing an efficiency improvement from 21.68% to 24.27% (2T configuration) and 25.19% (4T configuration). This approach is also feasible for thin‐film GaAs PV, essential to reduce its fabrication cost for commercialization, with performance increasing from 21.85% to 24.32% and superior flexibility (1000 times bending) in a tandem configuration. Additionally, potential routes to over 30% stable perovskite/GaAs tandems, comparable to InGaP/GaAs with lower cost, are considered. This work can be an initial step to reach the objective of improving the usability of GaAs PV technology with enhanced performance for applications for which lightness and flexibility are crucial, without a significant additional cost increase.

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Ultralight High‐Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic

Cited by 76 publications

References 23 publications

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells

Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells

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