Ultralow Power Optical Synapses Based on MoS<sub>2</sub> Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes (Adv. Mater. 52/2021)

Hu, Yunxia; Dai, Mingjin; Feng, Wei; Zhang, Xin; Gao, Feng; Zhang, Shichao; Tan, Biying; Zhang, Jia; Shuai, Yong; Fu, Yongqing; Hu, PingAn

doi:10.1002/adma.202170409

Cited by 26 publications

(27 citation statements)

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“…Such a low power consumption is due to the p–n junction at the WSe 2 /In 2 Se 3 interface which suppresses the PSC to the level of 10 −11 A. Furthermore, in Figure 6d, we compare the power consumption of the present heterojunction device with that of the reported artificial synaptic devices in the literature [ 40–54 ] including both electrical synaptic devices and photonic synapses. It shows that the power consumption per spike of our WSe 2 /In 2 Se 3 heterostructure synaptic devices is in the lowest class among these synaptic transistors.…”

Section: Resultsmentioning

confidence: 89%

A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe₂/In₂Se₃ Ferroelectric Heterostructure

Tang

et al. 2022

Adv Elect Materials

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Compared to conventional artificial vision systems, a biological visual system has an exclusive highly parallel architecture [4] that can respond directly to light stimuli and integrate adaptive detection and preprocessing functions. [5,6] Therefore, researchers have made a lot of efforts to simulate the behavior of biological visual systems using advanced devices. [7][8][9][10][11][12] This requires devices capable of converting optical signals into electrical signals over a wide spectral range with specific neuromorphic functions, such as short-term plasticity (STP), [13] longterm plasticity (LTP), [14] and paired impulse facilitation (PPF). [15] Previous reports have proposed several channel materials to achieve these functions, such as perovskite, [14,16] amorphous oxide thin film, [8,9,17] organic thin-film [18] or some 2D materials. [19] Although lightstimulated synaptic behaviors have been demonstrated, most of them [8,9,[19][20][21] are limited by the complex structures, such as the application of a floating gate, the additional trapping layer, and the integrated structures. These methods inevitably increase power consumption and limit integration. To simplify the device structure, novel mechanism is urgently needed. In addition, short-wavelength infrared (SWIR) light is less affected by atmospheric scattering than visible light, so that has a unique advantage in many important fields including night vision and all-weather imaging. Unfortunately, so far, there is hardly any photonic synaptic device that can operate in SWIR range. Different from many other semiconducting materials and most 2D materials, α-In 2 Se 3 is a 2D ferroelectric semiconductor [22,23] and can respond to SWIR light (up to 1800 nm) due to the oxygen-associated defects. [24] In addition, optical control of ferroelectric domain wall movement has been demonstrated in α-In 2 Se 3 due to its semiconductor property. [25] These limited results suggest that α-In 2 Se 3 might be promising for SWIR optical neuromorphic devices.Here, we demonstrate a novel mechanism for photonic synaptic device based on WSe 2 /In 2 Se 3 heterostructure. Using photoinduced ferroelectric polarization switching in α-In 2 Se 3 nanosheets, we realize the essential light-tunable synaptic functions such as STP, LTP, and PPF, and for the first time, the response wavelength reaches SWIR range (up to 1800 nm). We observe that the synaptic behaviors in these devices are Neuromorphic visual sensory and memory systems that can sense, learn and memorize optical information have great potential in many areas such as image recognition and autonomous driving. However, most current artificial neuromorphic vision technology is suffering from large power consumptions (>100 pJ per switching), high circuitry complexity, and difficulty in miniaturization due to the physical separation of the optic sensing, processing, and memory units. Here, a photonic neuromorphic device based on WSe 2 /In 2 Se 3 van der Waals (vdW) heterostructure is developed to meet the requirements of high-perfor...

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Section: Resultsmentioning

confidence: 89%

A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe₂/In₂Se₃ Ferroelectric Heterostructure

Tang

et al. 2022

Adv Elect Materials

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“…Recently, an artificial synaptic device made of MoS 2 film coated with an electron injection enhanced indium (In) layer has been proposed to increase channel conductivity and reduce power consumption by up to 68.9 FJ per spike, which is hundreds of times lower than that of optoelectronic artificial synapses previously reported in the literature. [ 61 ] Such type of design strategies provided a highly effective neural architecture with associative learning activity and diverse types of synaptic plasticity through multimode stimuli including photoactive mood.…”

Section: Nanostructured Materials For Optoelectronic Synapsesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

Ilyas

Wang

et al. 2021

Adv Funct Materials

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Neuromorphic photonics system based on the principle of biological brain is emerging as one of the potential solutions to the bottleneck inherent in classical von Neumann computing system. Optoelectronic synaptic devices, used to mimic the visual function of bio-synapse by adapting synaptic weights, can construct a highly efficient brain-inspired computing system, in which the nanostructured materials and device architectures are attracting extensive interests, giving many potential benefits in confined light-matter interaction, fast carrier dynamics, and photocarriers trapping. Moreover, the conjunction of traditional nanostructured photodetectors and newly realized electronic synapses also exhibit appealing performance for many practical applications including information processing and computing. This review focuses and summarizes on recent achievement in developing advanced optoelectronic synaptic devices based on nanostructured materials as 0D (quantum dots), 1D, and 2D materials, as well as, the rapidly evolving hybrid heterostructures. In addition, challenges and promising prospects in this research field are also discussed.

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“…Representatively, molybdenum disulfide (MoS 2 ) is one of the most typical 2D transition‐metal dichalcogenides stacked by S–Mo–S layers by van der Waals interactions. [ 14 ] More importantly, MoS 2 is greatly available to form solid solution with tunable hybrid structure. According to crystal‐field theory, it has been studied that the incompletely filled Mo4d orbital in octahedral symmetry give rise to narrower band gap than that in hexagonal symmetry.…”

Section: Introductionmentioning

confidence: 99%

Synergistic Polarization Loss of MoS₂‐Based Multiphase Solid Solution for Electromagnetic Wave Absorption

Gao

Lan

et al. 2022

Adv Funct Materials

158

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Given tunable hybridization structures in solid solutions, fascinating electromagnetic (EM) properties can be achieved for regulating EM wave (EMW) absorption. Herein, a novel metal–organic cooperative interactions method is proposed to manipulate the vacancy, interstitial, substitutional, and heterointerface structures in molybdenum disulfide (MoS2) solid solution simultaneously, thence meeting the synergistic polarization loss on various point and face sites. Assisted by the coordination between Cu2+ and polydopamine (PDA), the effect of Cu modification on MoS2 is highly improved, which further lead to polarization loss on S vacancy, interstitial Cu, substitutional N, and heterointerface between carbon and MoS2. Contributing to the synergetic effect among multiple polarizations, the Cu/C@MoS2 solid solution exhibit ultrahigh EMW absorption performance, of which EMA with twice PDA delivers the effective absorption bandwidth of 7.12 GHz and minimum reflection loss of −48.22 dB (2.5 mm). The energy attenuation of Cu/C@MoS2 improved almost 266.7% and 222.2% than C@MoS2 and Cu@MoS2, respectively. Finally, this work reveals the structural dependency of solid solution materials of EMW absorption and establishes an entirely new polarization loss model.

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Ultralow Power Optical Synapses Based on MoS₂ Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes (Adv. Mater. 52/2021)

Cited by 26 publications

References 0 publications

A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe₂/In₂Se₃ Ferroelectric Heterostructure

A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe₂/In₂Se₃ Ferroelectric Heterostructure

Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

Synergistic Polarization Loss of MoS₂‐Based Multiphase Solid Solution for Electromagnetic Wave Absorption

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Ultralow Power Optical Synapses Based on MoS2 Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes (Adv. Mater. 52/2021)

Cited by 26 publications

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A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe2/In2Se3 Ferroelectric Heterostructure

A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe2/In2Se3 Ferroelectric Heterostructure

Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

Synergistic Polarization Loss of MoS2‐Based Multiphase Solid Solution for Electromagnetic Wave Absorption

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Ultralow Power Optical Synapses Based on MoS₂ Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes (Adv. Mater. 52/2021)

A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe₂/In₂Se₃ Ferroelectric Heterostructure

A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe₂/In₂Se₃ Ferroelectric Heterostructure

Synergistic Polarization Loss of MoS₂‐Based Multiphase Solid Solution for Electromagnetic Wave Absorption