Ultralow switching current in HfOx/ZnO bilayer with tunable switching power enabled by plasma treatment

Lai, Yunfeng; Zeng, Zecun; Liao, Calvin C.Y.; Cheng, Shuying; Yu, Jiaxin; Qiao, Zheng; Lin, Peijie

doi:10.1063/1.4960798

Cited by 32 publications

(30 citation statements)

References 46 publications

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“…For IRS sample, the main O1s peak located at 529.8 eV is originated from Hf–O bonds in HfO 2 layer. While the component located at 531.9 eV is related to the oxygen vacancies associated with the CF . Similarly, for LRS sample, O1s peaks located at 529.9 and 530.9 eV are associated with Hf–O bonds in HfO 2 layer and oxygen vacancies in HfO 2 layer, respectively.…”

Section: Resultsmentioning

confidence: 87%

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Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Zhang

Huang

Xia

et al. 2019

Adv Elect Materials

137

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important role in flexible electronics. [1][2][3] Nonvolatile resistive random access memories (RRAM) have simple structure, excellent scalability, high switching speed, good retention, and low power consumption. Thus, they have been considered as promising candidates for charge-based memory and Flash. [4,5] In terms of flexible RRAM (FRRAM) applications, the investigations mainly focus on device processing, resistive switching (RS) behaviors, and mechanical flexibilities. [6][7][8] Many efforts have been devoted to achieve high performance FRRAMs with both small RS parameters variation and excellent flexibility. One of the representative obstacles is the nonuniformity of RS parameters, which leads to false programming and gives rise to readout hazards. [9,10] Some FRRAMs demonstrated fast programming speed, large storage window, excellent flexibility, and mechanical endurance. However, the coefficients of variation for the RS parameters were unexpectedly high. [10] On the basis of conducting filament (CF) theory in RRAM devices, the switching mechanism is highly depended on the CF formation/disruption during the writing/programming process, which in turn affects the device performance. As concerned as the valence change memory (VCM) RRAM, oxygen vacancies play an important role in a redox reaction, which determines the filament morphology. In order to enhance the performance and improve the distribution of switching parameters, bilayer RS structure such as /indium tin oxide (ITO), is proposed. Such RS layer can control the formation/rupture of CF consisting of oxygen vacancies. [11][12][13] HfO 2 and TiO 2 are typical high dielectric constant transition metal oxides in complementary metal oxide semiconductor (CMOS) integrated circuit applications. Due to the simple compositions and good compatibilities with CMOS processing, they have been widely investigated for memory device applications. [14] Especially, HfO 2 /TiO 2 bilayer structure has exhibited desired features, including self-rectification, multiple resistance states, self compliance, and stable bipolar RS property. [14,15] Bilayer structure based RRAM can operate at low voltage, which decreases the heat accumulation in the operating process and reduces the power consumption. [16] Thus, it is speculated that the stability of bilayer HfO 2 /TiO 2 FRRAM device will be improved by avoiding the undesirable heating during the read/write process. The low energy consumptions and high stabilities are highly desirable for wearable electronic applications.The authors declare no conflict of interest. Figure 6. a) The 1000th, 1500th, and 2000th I-V curves taken on FRRAM device. b) I-V curves at different stop voltages ranged between −1.3 and −1.6 V with step of 0.1 V.www.advancedsciencenews.com

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Section: Resultsmentioning

confidence: 87%

“…For obtaining LRS sample, we performed electrical measurements by using tungsten probe as top electrode. [23,24] Similarly, for LRS sample, O1s peaks located at 529. Then, the low resistance state was maintained and the XPS measurements have been carried out.…”

Section: Resultsmentioning

confidence: 95%

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Zhang

Huang

Xia

et al. 2019

Adv Elect Materials

137

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“…The plasma/ions irradiation, however, induces chemical reactions at the surface of the films. [33,38,39] We analyzed the O1s core level X-ray photoelectron spectroscopy (XPS) spectra and ZnL3M4.5M4 binding energy peaks corresponded to the amount of oxygen in the fully oxidized region, deficient region (also can be referred to as oxygen vacancy (Vo) defect), and loosely-bound oxygen (from the environment such as C-O, OH-, etc., and/or oxygen interstitial (Oi) defect), respectively. [40,41] Meanwhile, the ZnL3M4.5M4.5 Auger lines were fitted as two Gaussian resolved component peaks; the low-(ZnI) and high-(ZnII) binding energy peaks corresponded to the number of zinc interstitial (Zni) defects and the amount of zinc in the oxidized region, respectively.…”

Section: Resultsmentioning

confidence: 99%

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

et al. 2020

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Surface oxidation employing neutral oxygen irradiation significantly improves the switching and synaptic performance of ZnO-based transparent memristor devices. The endurance of the as-irradiated device is increased by 100 times, and the operating current can be lowered by 10 times as compared with the as-deposited device. Moreover, the performance-enhanced device has an excellent analog behavior that can exhibit 3-bits per cell nonvolatile multistate characteristics and perform 15 stable epochs of synaptic operations with highly linear weight updates. A simulated artificial neural network comprising 1600 synapses confirms the superiority of the enhanced device in processing a 40 × 40 pixels grayscale image. The irradiation effectively decreases the concentration of oxygen vacancy donor defects and promotes oxygen interstitial acceptor defects on the surface of the ZnO films, which consequently modulate the redox process during rupture and rejuvenation of the filament. This

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“…II B). This has been discussed in the literature as a signature for an oxygen vacancy V 0 in different oxide materials, [15][16][17][18][19][20] with either a 1þ or 2þ valency. 12,13,21 A major difference between ALD-and PVD-grown HfO 2 thin films results from using a metal-organic precursor molecule (TEMA-Hf) in the ALD case.…”

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confidence: 99%

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

Baumgarten

Szyjka

Mittmann

et al. 2021

Applied Physics Letters

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Ultralow switching current in HfOx/ZnO bilayer with tunable switching power enabled by plasma treatment

Cited by 32 publications

References 46 publications

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

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Ultralow switching current in HfOx/ZnO bilayer with tunable switching power enabled by plasma treatment

Cited by 32 publications

References 46 publications

Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory

Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

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Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory